transistor
Abstract: Samsung Semiconductor
Contextual Info: r 7 [ SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o § 7^4142 0007am, i | NPN EPITAXIAL SILICON TRANSISTOR — : -' T AMPLIFIER TRANSISTOR - a R - - SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage
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0007ammmbc1623l3transistorsamsung semiconductor |
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MARKING W2 SOT23 TRANSISTOR
Contextual Info: SAMSUNG SEMI CONDUCTOR INC NPN EPITAXIAL SILICON TRANSISTOR MMBC1623L4 :- T - ^ - H AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C - Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage
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mmbc1623l4ot-23mmbc1623l3marking w2 sot23 transistor |
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FLC - 100
Abstract: MMBC1623
Contextual Info: MOTOROLA XSTRS/R SC F 15E D I t3b725M DOflSTSO MAXIMUM RATINGS Symbol Value Unit Coilector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage Vebo 5.0 Vdc •c 100 mAdc MMBC1623L7L Symbol Max Unit CASE 318 03, STYLE 6 SOT-23 TO-236AB
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t3b725mmmbc1623l5lt-21-immbc1623l7l+5ot-23o-236abmmbc1623i6lflc - 100mmbc1623
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MMBC1623L6
Abstract: MMBC1623L3
Contextual Info: SA M S U N G SEMICONDUCTOR INC MMBC1623L6 14E 0 7 ^ 4 1 4 2 00072SQ 3 | NPN EPITAXIAL SILICON TRANSISTOR T -Ä t-fa AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voftage CoUector-Emitter Voltage Emitter-Base Voltage
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mmbc1623l6ot-23mmbc1623l3100ma+1100mhz
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MMBC1623L3
Contextual Info: r 7 .SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o §7^ 14 2 0007 am, i | NPN EPITAXIAL SILICON TRANSISTOR — :-T-aa- AMPLIFIER TRANSISTOR - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage
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000724bmmbc1623l3ot-23100ma+1100mhz
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MARKING W2 SOT23 TRANSISTOR
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBC1623L7 IM E D £ V ì b l l M a 0007251^5 ^ NPN EPITAXIAL SILICON TRANSISTOR -AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic
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mmbc1623l7ot-23mmbc1623l3marking w2 sot23 transistor |
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SE 135
Abstract: SE135 ic 74142 E10*A
Contextual Info: S AM S UNG SEMICONDUCTOR INC MMBC1623L5 14E D 7^ 4142 000754*1 7 | NPN EPITAXIAL SILICON TRANSISTOR T - - A 9 - (<? AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C C haracteristic Collector-Base Voltage Collector-Emitter Voltage .Emitter-Base Voltage
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mmbc1623l5ot-23mmbc1623l3se 135+3se135ic 74142e10*a
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MARKING W2 SOT23 TRANSISTOR
Abstract: MMBC1623L6
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBC1623L6 lq E | 0007850 | 3 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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mmbc1623l6ot-23mmbc1623l3marking w2 sot23 transistor |
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MMBC1623L5
Abstract: 519 SOT23 TRANSISTOR pc 135 MMBC1623L3 519 SOT23 MARKING
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBC1623L5 IME D 17^4142 000754*1 7 | NPN EPITAXIAL SILICON TRANSISTOR T-A 9- <? AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage .Emitter-Base Voltage
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mmbc1623l5ot-23mmbc1623l3100ma+4100mhz519 sot23transistor pc 135519 sot23 marking
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TRANSISTOR TZ
Abstract: MMBC1623L3 MMBC1623L4 TZ marking
Contextual Info: S A MS UN G SEM ICONDUCTOR INC 11E 0 000724Ä 5 | NPN EPITAXIAL SILICON TRANSISTOR MMBC1623L4 - ñ T~<2q- AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic - Symbol Collector-Base Voltage
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mmbc1623l4mmbc1623l3100ma100mhz+2transistor tztz marking
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rca 2n2147
Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer
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bfx69a2n1594bcw94a2sc366g+152n1644a2n21922n2192a2n2192bmps650rca 2n21472n22072n2183 rca2n21962n22142n21612n2222a motorola2n22042n21622n2200
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555
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PN2222A MOTOROLA
Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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rn5816rn5b16rn5818hse125+15hse210hse1712nl0512n24802n2479pn2222a motorolavalvoemihusphilco-fordvalvo gmbh2sc1330diode 6aa2n709aelcomakt503a
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2n2222/aktn2222/a2sa1150kta1272+162sa15102sb546a2n2369/aktn2369/a2sa1151kta1266lm8550ktd20262sc2320 equivalentnec 12f datasheet2n3904 motorola2sc2240 equivalent2n3906 motorola2sc19832n5400 motorola2sd1960
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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bas32bas45bav105ll4148+15ll4448bb241bb249ll914ll4150mmbd2104transistor nec 05fhp2835 diodezener diode t2dwhat is the equivalent of ztx 458 transistormmbd2103t2d diode 3wt2d 8n2n2222 as equivalent for bfr96mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249mmbd2103zener diode t2dmmbd2101mmbd2102mmbd2104smd codesbc107 transistor smd code package sot23transistor nec 05fbat15-115snds358n
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249smd codestransistor smd t1pmmbd2104baw92smd transistor a6aschottky diode s6 81aa4s smd transistortransistor smd a7stransistor smd p2fmmbd2101
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j
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2N3609
Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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rn5816rn5b16rn5818hse125+15hse210hse1712nl0512n24802n24792n36092n36332n35202n3618 motorola2sc1330transitron2n3543kt503alow-power silicon npn2n3625
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