MM404 Search Results

MC4049

Abstract: mrf536 MRF534 MM4049 hfe 4049 MMC4049 case 317-01
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM4049 MMC4049 MRF534 MRF536 The RF Line PNP SILICON HIGH-FREQUENCY TRANSISTORS . . . d e s ig n e d f o r u s e a s a h ig h - f r e q u e n c y c u r r e n t m o d e s w itc h . B e c a u s e o f th e e x tr e m e ly

MRF534

Abstract: MRF536 MC4049 mm4049
Contextual Info: MOTOROLA SC XSTRS/R F 4bE T> b3b72S4 00=14230 MOTOROLA 4 «flOTb T=-3 l - o i • SEM ICO NDUCTOR I TECHNICAL DATA MM4049 MMC4049 MRF534 MRF536 The RF Line P N P S I L IC O N H IG H - F R E Q U E N C Y T R A N S I S T O R S . . . d e s ig n e d fo r u s e a s a h ig h -f r e q u e n c y cu rre n t m o d e sw itc h .

transistor 45 f 122

Abstract: MM4049 transistor MM4049
Contextual Info: MM4049 SILICON The R F L in e 4.0 GHz @ 20 mAdc HIGH FREQ UENCY T RA N SISTO R PNP SILIC O N H IGH -FREQU ENCY T RAN SISTO R . . designed for use as a high-frequency current mode switch. Because of the extremely high Current-Gain— Bandwidth this transistor also

Contextual Info: MM4049 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)10

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

SFT308

Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

SFT307

Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

Contextual Info: o o o o o in oo oo o o V- CM 1 1 1 1 1 o o m o o in in cm in in C O r- r in in in o o co co co in r- COCOCOCMO t- r*. I i i i i i 1 1 1 1 ! o o o o o in in in in in o o o O 1 m in in o 1 C/D CO . OO 'S" a a UJ LH I I I I I o o o o I in o in o I 1 o o o o o

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

tvg for sonar

Abstract: AD6021 AD602 agc for sonar 00538 AD600 AD602JR r2r resistor ladder networks smd 2n3904 pre-amp application note audio agc preamp
Contextual Info: Dual, Low Noise, Wideband Variable Gain Amplifiers AD600/AD602 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS Ultrasound and sonar time-gain controls High performance audio and RF AGC systems Signal measurement GENERAL DESCRIPTION The AD600/AD6021 dual-channel, low noise, variable gain

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

AD6020

Abstract: 2n3904 pre-amp application note sonar beamforming
Contextual Info: BACK a FEATURES Two Channels with Independent Gain Control “Linear in dB” Gain Response Two Gain Ranges: AD600: 0 dB to +40 dB AD602: –10 dB to +30 dB Accurate Absolute Gain: ؎0.3 dB Low Input Noise: 1.4 nV/√Hz Low Distortion: –60 dBc THD at ؎1 V Output

ad590 application

Abstract: tvg for sonar ultrasound block diagram WIDEBAND ULTRASOUND ad590 temperature transducer ultrasound transducer 100KHz 2n3904 smd pdf data application note AD602JR AUDIO Voltage Variable Attenuator mv-vg
Contextual Info: a Dual, Low Noise, Wideband Variable Gain Amplifiers AD600/AD602* FEATURES Two Channels with Independent Gain Control “Linear in dB” Gain Response Two Gain Ranges: AD600: 0 dB to 40 dB AD602: –10 dB to +30 dB Accurate Absolute Gain: ؎0.3 dB Low Input Noise: 1.4 nV/√Hz

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

NE24483

Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC