MM401 Search Results

mm4018

Contextual Info: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli­ cations in military and industrial equipment. Suitable for use as

MM4018

Abstract: a5036 MM4018 motorola
Contextual Info: MM4018 , < II The RF Line II 1., PNP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. Suitable for use as Class A, B, or C driver, or pre-driver stages in VHF applications.

MM4018

Contextual Info: MM4018 SILICON PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier or oscillator appli­ cations in m ilitary and industrial equipm ent. Suitable fo r use as Class A , 6 , or C driver, or pre-driver stages in V H F applications.

4016D

Abstract: MM5016 IC 4016 PIN DIAGRAM D16C M4016H MM5016H M5016H MM5016D MOS 4016 MM5016N
Contextual Info: Shift Registers MM4016/MM5016 512-Bit Dynamic Shift Register general description M ilita ry and C om m ercial Tem perature Ranges M M 4 01 6 - 5 5 C to + 1 25VC M M 5 01 6 0°C to +70° C The M M 4 0 1 6 /M M 5 0 1 6 5 1 2 -b it d yna m ic s h ift reg­ ister is a m o n o lith ic MOS integrated c irc u it u tiliz ­

2N3553 equivalent

Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz

MM4010

Abstract: MM4008 MM4009 fsjc
Contextual Info: MM4008 silicon thru MM4010 PNP SILICON A N N U L A R AM PLIFIER TRANSISTO RS . . designed a p p lica tio n s. fo r use in high voltage a m p lifie r and PNP SILICON TRANSISTO RS sw itch in g C o lle c to r-E m itte r B re a k d o w n V o lta g e @ Iq - 10 m A d c

VHF power TRANSISTOR PNP TO-39

Abstract: LN 7904 i31n mm4018
Contextual Info: I MOTOROLA SC XSTRS/R MbE D F h3b?2S4 G Q tm 2 3 t i MOTOROLA r SEMICONDUCTOR TECHNICAL DATA - 3 ^ HOTb n MM4018 T h e R F L in e \q 9 = - 4 0 0 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . designed for amplifier, frequency multiplier or oscillator appli­

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

Contextual Info: o o o o o in oo oo o o V- CM 1 1 1 1 1 o o m o o in in cm in in C O r- r in in in o o co co co in r- COCOCOCMO t- r*. I i i i i i 1 1 1 1 ! o o o o o in in in in in o o o O 1 m in in o 1 C/D CO . OO 'S" a a UJ LH I I I I I o o o o I in o in o I 1 o o o o o

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

PCX2 335M MKP

Abstract: pcx2335mmkp pilkor PCX2 335 mkp 275v x2 100n m 275v PCX2.335M pcx2 335 mkp 100n H 275v-x2 X2 275V 100N pilkor PCX2 335M
Contextual Info: Pilkor components Interference Suppression film capacitors PCX2 335M 100℃ MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5mm QUICK REFERENCE DATA Capacitance range (E6 series) * 0.01㎌ to 2.2㎌ Capacitance tolerance ±10 %, ±20 % Rated (AC) voltage 50 to 60 Hz

TR 4010A

Contextual Info: M M 40 01A /M M 50 01A . M M 4 0 1 0 A /M M 5 0 1 0 A Shift Registers NATIONAL M M 4 0 0 1 A / M M 5 0 0 1 A dual 6 4 -b it dynam ic shift register M M 4 0 1 0 A / M M 5 0 1 0 A dual 6 4 -b it accum ulator general description features The MM4001A/M M 5001A dual 64-bit dynamic

2SA1402E

Abstract: 2SC2224 2SA1371E
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425

2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2n4427 MOTOROLA

Abstract: MRF536 motorola 2N4427 Y parameters of transistors 2N3948 mrf901 2n5160 MRF586 BFY90 MOTOROLA 2N5583
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2SA1370E

Abstract: 2SA13600 HITACHI AXIAL DIODE diode *7723 BCY77VII
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

FZK101

Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Contextual Info: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974