MJH11017 Search Results

MJH11020G

Abstract: MJH11017 MJH11017G MJH11018 MJH11018G MJH11019 MJH11019G MJH11020 MJH11021 MJH11022
Contextual Info: MJH11017, MJH11019, MJH11021 PNP MJH11018, MJH11020, MJH11022 (NPN) Preferred Device Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.

Contextual Info: MOTOROLA O rder this docum ent by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: npn darlington transistor 150 watts 1N5825 MJ10012 MJH10012 MJH11017 MJH11018 MJH11019 MJH11020 MJH11021
Contextual Info: MOTOROLA Order this document by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.

Contextual Info: Jziiz iJ-^ioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION 1 • High DC Current Gain: hFE = 400(Min)@lc=-10A • Collector-Emitter Sustaining Voltage-

npn darlington transistor 150 watts

Abstract: transistor MJH 11020 Motorola Bipolar Power Transistor Device Data MJH11017 MJH11020 mj10012 motorola MJH11022 oasis MJ10012 MJH10012
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JH 10012 S e » M M 1 0 0 1 2 Complementary Darlington Silicon Power Transistors PNP MJH11017* MJH11019* MJH11021* NPN MJH11018* MJH11020* MJH11022* , . . designed for use as general purpose amplifiers, low frequency switching and

MJH11021

Contextual Info: ON Semiconductort PNP MJH11017 * Complementary Darlington Silicon Power Transistors MJH11019 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11021 * • High DC Current Gain @ 10 Adc — •

MJH11020

Abstract: SOT93 MJH11017 MJH11017G MJH11018 MJH11018G MJH11019 MJH11019G MJH11021 MJH11022
Contextual Info: MJH11017, MJH11019, MJH11021 PNP MJH11018, MJH11020, MJH11022 (NPN) Preferred Device Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.

10 amp npn darlington power transistors

Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn darlington transistor 150 watts 1N5825 MJ10012 MJH10012 MJH11017 MJH11018 MJH11019 MJH11020
Contextual Info: MOTOROLA Order this document by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.

mjh11022g

Abstract: MJH11020G MJH1102 mjh11019 mjh11
Contextual Info: MJH11017, MJH11019, MJH11021 PNP MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features

Contextual Info: ON Semiconductort PNP MJH11017 * Complementary Darlington Silicon Power Transistors MJH11019 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11021 * • High DC Current Gain @ 10 Adc — •

MJH11022

Contextual Info: MJH11017, MJH11019, MJH11021 PNP MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

Contextual Info: ,O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJH11018 Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE = 400(Min)@lc=10A • Collector-Emitter Sustaining Voltage-

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

2N3055 plastic

Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art

transistor rc 3866

Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

D45H11 equivalent replacement

Abstract: transistor equivalent book 2SC2073 BDX36 equivalent bd139 equivalent transistor BUT11Af equivalent BU108 334 bdw93c f P6042 2SA818 equivalent transistor mj11028 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16002* MJE16004*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for

tip122 tip127 audio amp

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc

MJL21194 equivalent

Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

BU108

Abstract: C 3883 2SA1046 2SC7 MOTOROLA TIP115 transistor TIP116 TEXAS All similar transistor 2sa715 BU326 BU100 2N6254 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc