MJE700T MJE800T Search Results

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR npn transistor nt 407 f MJE700T 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 MJE701T NPN/NT 407 F TRANSISTOR MJE703T
Contextual Info: ÆàMOSPEC PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . designed for general-purpose and low-speed switching application. MAXIMUM RATINGS Sym bol MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T MJE802T MJE803T Unit Collector-Emitter Voltage

Complementary Darlington Audio Power Amplifier

Abstract: MJE700T MJE700 MJE701T MJE702 MJE702T MJE703T MJE800T MJE802T MJE803T
Contextual Info: c o lt r a i MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN s e m i c o n d u - v * *&«•*j centrai Sem iconductor Corp. Central Sem iconductor Corp. Central Sem iconductor Corp. ♦I ! SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS JEDEC T0-220AB CASE

JE802

Abstract: JE700 JE803 JE700 MOTOROLA JE702 JE703 JE800 75 watt npn switching transistor MJE700T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T M JE702 Plastic Darlington Com plem entary Silicon Power Transistors M JE703 . . . designed lor general-purpose amplifier and low-speed switching applications. • • • High DC Current Gain — hFE = 2000 Typ @ lc = 2.0 Adc

mje802

Contextual Info: ^Eini-donduatoi ^Products., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PNP Plastic Darlington Complementary Silicon Power Transistors . . . designed for general-purpose amplifier and low-speed switching applications.

to225a

Abstract: MJE803 MOTOROLA MJE700T motorola 803 transistor MJE800T equivalent MJE700 MJE702 MJE703 MJE800 MJE800T
Contextual Info: MOTOROLA Order this document by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —

JE800

Abstract: JE802 JE702 JE803 JE700 MOTOROLA MJE800-803 N5825 MJE700T MJE700T MJE800T
Contextual Info: MOTOROLA Order this document by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T Plastic Darlington Com plem entary Silicon Power Transistors M JE702 M JE703 . . . designed for general-purpose amplifier and low -speed switching applications. • • •

MJE13009

Abstract: MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent
Contextual Info: TO-220 Power Transistors TO-220 Case Continued TO-220FP Full Pak • Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530

Contextual Info: Power Transistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499

2N6530

Abstract: MJE700T
Contextual Info: Power Transistors TO-220 Case Continued TY P f NO, 1C m MW PNP PD m MAX BVépo BVCtO m VCE(SAT) @ 1C h re (A) m m m MB MAX (V) (A) fT (MHz) Iflffcl mnf MAX 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499 5.0

bu408 equivalent

Abstract: 330.150 bu806 equivalent equivalent mje13005 mje13007 equivalent MJE800T equivalent MJE700T bu406d BU407D BU408D
Contextual Info: Standard Optional Power Transistors TO-220 Case Continued TO-220 TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 2N6530 8.0 65 80 80 2N6531 8.0 65 100 2N6532 8.0 65 100

045h11

Abstract: bu4060 bu406d BU407D MJE3055T MJE700T
Contextual Info: Pow er Tran sistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ IC hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499

Contextual Info: MOTOROLA SC XSTR S/R F 4bE D • b3fc>72S4 00*13403 T ■ TABLE 3 - PLASTIC TO-220 (continued) H OT b *7 ^ 3 3 ' 0 ( Resistive Switching IcCont Amps Max 2 2.5 3 V CE0(SUS) 6 1 12 typ 40 1.4 1 4 50 3* 0.17* 1 12 typ 40 1 4 typ 0.8 typ 1 7.5 min 0.5 4 2

mje13007

Contextual Info: O Power Transistors TO-220 Case TYPE NO. NPN PNP tc PD <A W) MAX BVCBO BVCEO @ ic hFE <V) 00 MIN MIN MIN MAX (A) VCE(SAT) @ 1C CO (A) MAX fr (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80

MJE1300

Contextual Info: TO-220 Power Transistors TO-220 Case TO-220FP Full Pak • Fully Isolated Standard TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 4.0 36 60 40 4.0 36 80 60 2N5490 7.0 50 60 2N5492

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

transistor K 3596

Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

B0411

Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864

2N3055 plastic

Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

tip122 tip127 audio amp

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc

MJL21194 equivalent

Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.