MICROWAVE FET IC Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM5964-4-251 RF PERFORMANCE SPECI ICATIONS Ta=25 °C SYMBOL CONDITION UNIT CHARACTERISTICS PldB dBm Output Power at ldB Gain Compression Point VDD=10V F = 5.9-6.75GHz dB Power Gain at ldB

Contextual Info: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM5964-4-251 RF PERFORMANCE SPECI ICATIONS Ta=25 °C SYMBOL CONDITION UNIT CHARACTERISTICS PldB dBm Output Power at ldB Gain Compression Point VDD=10V F = 5.9-6.75GHz dB Power Gain at ldB

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band

Microwave Semiconductor

Abstract: TIM1414-4-252
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB

Contextual Info: MODULE GaAs FET AMPLIFIERS Añfc MLA 2900-000 SERIES MICROWAVE COMMON MODULE BROADBAND GaAs FET AMPLIFIERS 2.0 TO 18.0GHz EATURES MiCM 20 Compatible Def Stan & CECC Specifications Direct 50ohm Microstrip Interfaces Broad Frequency Ranges Wide Dynamic Ranges

TIM5964-16SL-081

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc at Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED HIGH POWER

MGF2445A

Abstract: Scans-0065801 n-channel 4336
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445A MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n it: m illim e te rs The M G F2445A , power GaAs FET with an N-channel schottky gate , is designed fo r use in S to Ku band am pli­ fiers. 2 - 01.6 FEATURES

TIM0910-15L

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA UNIT dBm MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000 MAX. 4.5 5.5 +/-0.8 — UNIT mS MIN. V -1.5 Ö RF PERFORMANCE SPECI ICATIONS Ta=25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-35SL TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION T|add = 37% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB = 8.0dB at 5.9 to 6.4GHz

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

Contextual Info: TOSHIBA I MICROWAVE POWER GaAs FET MICROWAVE SEM ICONDUCTO R- TIM0910 8 TECHNICAL DATA FEATURES: • HIGH POWER PldB =39.5 dBm at 9.5 GHz to 10.5 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN G*|dB = 6-0 dB at 9.5 GHz to 10.5 GHz ■ HERMETICALLY SEALED PACKAGE

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE

TPM2323-30

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA I TPM2323-30 FEATURES: • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 44.5 dBm at 2.3 GHz ■ HIGH GAIN G1dB = 11.5 dB at 2.3 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

F9310

Abstract: s1188
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-2 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 33.5 dBm at 9.5 GHz to 10.5 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GldB = 7.5 dB at 9.5 GHz to 10.5 GHz ■ HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1414-2 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 33.5 dBm at 14. M3Hz to 14.5 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 6.5 dB at 14.0 GHz to 14.5 GHz ■ HERMETICALLY SEALED PACKAGE

TIM5964-4SL-422

Abstract: PT 2102 ic
Contextual Info: MICROWAVE POWER GaAs FET TIM5964-4SL-422 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 25.5dBm Single Carrier Level n HIGH POWER P1dB=36.5dBm at 5.85GHz to 6.75GHz n HIGH GAIN G1dB=8.0dB Min. at 5.85GHz to 6.75GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1414-10L TECHNICAL DATA FEATURES : B H LOW INTER M O D U LA TIO N DISTO RTIO N IM 3 = - 45 dBc at Po = 29.0 dBm, G icjb = 5.0 dB at 14.0 GHz to 14.5 GHz Single Carrier Level • HIGH POWER P - l c jb

IC ADD 3501

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM4450-16 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 42.5 dBm at 4.4 GHz to 5.0 GHz BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9-0 dB at 4.4 GHz to 5.0 GHz HERMETICALLY SEALED PACKAGE