MICROWAVE FET IC Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB

Contextual Info: MODULE GaAs FET AMPLIFIERS Añfc MLA 2900-000 SERIES MICROWAVE COMMON MODULE BROADBAND GaAs FET AMPLIFIERS 2.0 TO 18.0GHz EATURES MiCM 20 Compatible Def Stan & CECC Specifications Direct 50ohm Microstrip Interfaces Broad Frequency Ranges Wide Dynamic Ranges

TIM5964-16SL-081

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc at Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED HIGH POWER

MGF2445A

Abstract: Scans-0065801 n-channel 4336
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445A MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n it: m illim e te rs The M G F2445A , power GaAs FET with an N-channel schottky gate , is designed fo r use in S to Ku band am pli­ fiers. 2 - 01.6 FEATURES

TIM0910-15L

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA UNIT dBm MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000 MAX. 4.5 5.5 +/-0.8 — UNIT mS MIN. V -1.5 Ö RF PERFORMANCE SPECI ICATIONS Ta=25°C

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

TIM4951-8

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM4951-8 TECHNICAL DATA_ _ _ _ _ _ _ _ _ FEATURES: • HIGH POWER P-jdB = 39 dBm at 4.9 GHz to 5.1 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9-5 dB at 4.9 GHz to 5.1 GHz

Toshiba JS8836A-AS

Abstract: JS8836A-AS
Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER IdB = 29.5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION HIGH GAIN G1dB = 7 5 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci

M37421

Abstract: TIM3742-16SL M3742
Contextual Info: T O S H IB A MICROWAVE POWER G aAs FET MICROWAVE SEM ICONDUCTOR T IM 3742-16S L TECHNICAL DATA PRELIMINARY FEATURES : • ■ LOW INTERMODULATION DISTORTION IM3 a - 4 5 d B c a t P O a 31.5 dBm, Single Carrier Level HIGH POWER Pi<» “ 42.5 dBm at 3.7G H * to 4.2G H *

TIM5964-16SL-251

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-16SL-251 TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH GAIN ¡M3 = - 4 5 d B c a t P o = 31.5 dBm, GidB = 8.0 dB at 5.9 GHz to 6.75 GHz Single Carrier Level ■ BROAD BAND INTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM5359-8 TECHNICAL DATA W M — W FEATURES: • HIGH POWER P-jdB = 39 dBm at 5.3 GHz to 5.9 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 8.5 dB at 5.3 GHz to 5.9 GHz ■ HERMETICALLY SEALED PACKAGE

e9024

Contextual Info: SGM5102F Son y. GaAs N-channel Microwave MES FET Description The SGM5102F is an N-channel GaAs MES FET designed fo r low noise am plifiers from C to Ku bands. SGM5102F-T6 is fo r taping. MES: Metal Sem iconductor Package O u tlin e U n it : mm Structu re GaAs N-channel MES field effect tran sisto r

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET SEMICONDUCTOR TIM3742-8 TECHNICAL DATA 3 FEATURES: • HIGH POWER P-jdB = 39 dBm at 3.7 GHz to 4.2 GHz BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 10.0 dB at 3.7 GHz to 4.2 GHz HERMETICALLY SEALED PACKAGE RF PERFORM AN CE SPECIFICATIONS Ta = 25°C

Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-15 TECHNICAL DATA FEATURES: • HIGH POWER P ,c ib ■ = 4 2 . O dBm a t HIGH GAIN G ida » 6. QdB a t 12.7 \ to « BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE 1 3 . 2 GHz

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN G id B = 6 .0 dB at f = 2 3 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET SEMICONDUCTOR TIM5964-16 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 42.5 dBm at 5.9 GHz to 6.4 GHz BROAD BAND IN T E R N A L L Y MATCHED ■ HIGH GAIN G idB = 7 dB at 5.9 GHz to 6.4 GHz H E R M E TIC A LLY SEALED PACKAGE

CHR2291

Contextual Info: CHR2291 12-17GHz Integrated Down Converter GaAs Monolithic Microwave IC Description LO The CHR2291 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial

CHR2292

Contextual Info: CHR2292 17-20GHz Integrated Down Converter GaAs Monolithic Microwave IC LO Description The CHR2292 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial

CHR2295

Contextual Info: CHR2295 24-30GHz Integrated Down Converter GaAs Monolithic Microwave IC Description LO The CHR2295 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial

564 fet

Abstract: MGF2415 MGF2415A ku Band Power GaAs FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 1 5 A , power GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power • High power gain

RF TO VGA CONVERTER circuit

Abstract: converter 20 GHz CHR2293 fet mixer VGA Multiplier IC
Contextual Info: CHR2293 RoHS COMPLIANT 20-24GHz Integrated Down Converter GaAs Monolithic Microwave IC LO Description The CHR2293 is a multifunction chip which integrates a LO X2 multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial