MICROWAVE FET IC Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-45SL MICROWAVE SEM ICONDUCTOR TECHNICAL DATA FEATURES • LOW ITERMODULATION DISTORTION ■ IM3=-45dBc at Po=35.5dBm ■ HIGH GAIN GldB=9.5dB at 4.4GHz to 5.0GHz Single Carrier Level ■ BROAD BAND IMTERNALLY MATCHED

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER G aAs FET N-CHANNEL G aAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The N EZ Series of microwave power G aAs FET s offer high output power, high gain and high efficiency at C-band

Contextual Info: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM5964-4-251 RF PERFORMANCE SPECI ICATIONS Ta=25 °C SYMBOL CONDITION UNIT CHARACTERISTICS PldB dBm Output Power at ldB Gain Compression Point VDD=10V F = 5.9-6.75GHz dB Power Gain at ldB

Contextual Info: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM5964-4-251 RF PERFORMANCE SPECI ICATIONS Ta=25 °C SYMBOL CONDITION UNIT CHARACTERISTICS PldB dBm Output Power at ldB Gain Compression Point VDD=10V F = 5.9-6.75GHz dB Power Gain at ldB

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band

Microwave Semiconductor

Abstract: TIM1414-4-252
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB

S9G66A

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB

MGF2415

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The MGF2415A, power GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band ampli­ fiers. FEATURES • High output power P1dB = 27.5 dBm TYP. @ 14.5 GHz

TIM6472

Abstract: TIM6472-45SL
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEM ICO NDUCTOR TIM6472 — 45SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN G ,da = 8.0 dB at 6.4 GHz to 7 2 GHz IMa = - 45 dB c at Po = 35.5 dBm. Single Carrier Level ■ HIGH POWER

Contextual Info: MODULE GaAs FET AMPLIFIERS Añfc MLA 2900-000 SERIES MICROWAVE COMMON MODULE BROADBAND GaAs FET AMPLIFIERS 2.0 TO 18.0GHz EATURES MiCM 20 Compatible Def Stan & CECC Specifications Direct 50ohm Microstrip Interfaces Broad Frequency Ranges Wide Dynamic Ranges

TIM5964-16SL-081

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc at Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED HIGH POWER

RPX 200

Contextual Info: RAYTTTTöN" COV MXCROUJAVE 70 & Raytheon Company Special Microwave Devices Operation v 75T?E21 □□□□401 □ 617 393 7300 Bearfoot Road ' Northboroligh, M A O 1532 - O f 7597221 RAYTHEON ICO» MICROWAVE £ 760-00401 RPX 6000 Series X-Band Power GaAs FET s

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA UNIT dBm MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000 MAX. 4.5 5.5 +/-0.8 — UNIT mS MIN. V -1.5 Ö RF PERFORMANCE SPECI ICATIONS Ta=25°C

TIM0910-15L

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA UNIT dBm MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000 MAX. 4.5 5.5 +/-0.8 — UNIT mS MIN. V -1.5 Ö RF PERFORMANCE SPECI ICATIONS Ta=25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-35SL TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION T|add = 37% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB = 8.0dB at 5.9 to 6.4GHz

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-16SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH EFFICIENCY IM3 = - 45 dBc at Po = 31.5 dBm, qadd = 31 % at 7.1 GHz to 7. 9 GHz Single Carrier Level ■ HIGH GAIN HIGH POWER

Contextual Info: TOSHIBA I MICROWAVE POWER GaAs FET MICROWAVE SEM ICONDUCTO R- TIM0910 8 TECHNICAL DATA FEATURES: • HIGH POWER PldB =39.5 dBm at 9.5 GHz to 10.5 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN G*|dB = 6-0 dB at 9.5 GHz to 10.5 GHz ■ HERMETICALLY SEALED PACKAGE

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

degl

Abstract: MGF2445 L to Ku band GaAs
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445 MICROWAVE POWER GaAs FET DESCRIPTION The M G F2445, pow er GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power • High pow er gain