TIM6472 Search Results

50920-1

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 dB c at Po = 28.5 dBm, - Single carrier level • High power - P idB = 39 dBm at 6.4 GHz to 7.2 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r

TIM6472-30L

Contextual Info: TOSHIBA TIM6472-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 44.5 dBm at 6.4 GHz to 7.2 GHz

TIM6472-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TIM6472-6UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TIM6472-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TIM6472-25UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

285-2 MAG IC

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM6472-8 TECHNICAL DATA FEATURES: • HIGH POWER P*|dB = 39 dBm at 6.4 GHz to 7.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GldB = 7.0 dB at 6.4 GHz to 7.2 GHz ■ HERMETICALLY SEALED PACKAGE

TIM6472-12UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM6472-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM6472-8SL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=7.5dB at 6.4GHz to 7.2GHz

TIM6472-16SL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level „ HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=7.0dB at 6.4GHz to 7.2GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM6472-25UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM6472-30SL

Abstract: PO43
Contextual Info: MICROWAVE POWER GaAs FET TIM6472-30SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=7.0dB at 6.4GHz to 7.2GHz

TIM6472-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM6472-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM6472-4

Contextual Info: TOSHIBA TIM6472-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package

tim6472

Abstract: TIM6472-16L
Contextual Info: TOSHIBA TIM6472-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 6.4 GHz to 7.2 GHz