TIM0910 Search Results

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

TIM0910-20

Contextual Info: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC

Contextual Info: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

TIM0910-2

Contextual Info: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

TIM0910-10

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-10 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=40.5dBm at 9.5GHz to 10.5GHz „ HIGH GAIN G1dB=6.0 dB at 9.5 GHz to 10.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM0910-20

Contextual Info: TOSHIBA M ICROW AVE MICROWAVE SEMICONDUCTOR POW ER G aA s TIM0910-20 TECHNICAL DATA FEATURES: • HIGH POWER BROAD BAND IN TE R N A LL Y MATCHED P id B = 43. 5 d Bm at 9. 5GHz to 10. 5GHz ■ HIGH G AIN ■ H E R M E TIC A LLY SEALED PACKAGE G i d B = 6.0 dB at 9.5GHz to 10.5GHz

Contextual Info: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G 1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-5 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=37.5dBm at 9.5GHz to 10.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.0dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-15 TECHNICAL DATA FEATURES : • HIGH POWER BROAD BAND INTERNALLY M ATCHED PidB ■ 42.0 dBm at 9.5 G H z to 10.5 GHz HIG H GAIN ■ HERMETICALLY SEALED PACKAGE G 1dB = 7.0 dB at 9.5 G H z to 10.5 G Hz

5Ghz

Contextual Info: TOSHIBA MICROW AVE POWER OaAs MICROWAVE SEMICONDUCTOR TIM0910—20 TECHNICAL DATA FEATURES: • HIGH POWER BROAD BAND INTERNALLY MATCHED P id B = 43. 5 dBm at 9. 5GHz to 10. 5GHz HIGH GAIN ■ HERMETICALLY SEALED PACKAGE G ld B = 6 .0 dB at 9.5GHz to 10. 5GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA UNIT dBm MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000 MAX. 4.5 5.5 +/-0.8 — UNIT mS MIN. V -1.5 Ö RF PERFORMANCE SPECI ICATIONS Ta=25°C

TIM0910-4

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 9.5GHz to 10.5GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS

TIM0910-8

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-8 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 9.5GHz to 10.5GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS

Contextual Info: TOSHIBA M ICROW AVE POWER QaAs F MICROWAVE SEMICONDUCTOR TIM0910-20 TECHNICAL DATA FEATURES: • H IG H POWER P id B = 43. 5 dBm at 9. 5GHz to 10. 5GHz H IG H G A IN G id B = 6 .0 dB at 9.5GHz to 10.5GHz B R O A D BAND IN T E R N A L L Y M A TC H ED ■ H E R M E T IC A L L Y S E A LE D PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-15 TECHNICAL DATA FEATURES : • HIGH POW ER BROAD BAND INTERNALLY MATCHED PidB ■ 42.0 dBm at 9.5 G H z to 10.5 GHz HIG H GAIN ■ HERMETICALLY SEALED PACKAGE GidB = 7.0 dB at 9.5 G H z to 10.5 G Hz

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 9.5GHz to 10.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM0910-4

Contextual Info: TOSHIBA TIM0910-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

TIM0910-20

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-20 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED P1dB=43.0dBm at 9.5GHz to 10.5GHz „ HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

Contextual Info: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

TIM0910-5

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-5 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED P1dB=37.5dBm at 9.5GHz to 10.5GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.0dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS

TIM0910-15L

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.0dBm at 9.5GHz to 10.5GHz „ HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: TOSHIBA TIM0910-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TIM0910-4 TECHNICAL DATA FEATURES : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE p idB = 36.5 dBm at 9.5 GHz to 10.5 GHz ■ HIGH GAIN G-icjb = 7.5 dB at 9.5 GHz to 10.5 GHz