NE960R2 Search Results

NE960R2

Abstract: NE960R200 NE960R275 NE961R200
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

NEC JAPAN

Abstract: NE960R2 NE960R200 NE960R275
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear

NE960R275

Contextual Info: 0.2W X, Ku-BAND POWER GaAs MESFET FEATURES NE960R275 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 25.0 dBm TYP @ P1 dB PACKAGE OUTLINE 75 • HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz • HIGH EFFICIENCY: 35% TYP @ 14.5 GHz +0.15 -0.05 2 PLACES φ 1.8

Contextual Info: 0.2W X, Ku-BAND POWER GaAs MESFET FEATURES NE960R275 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 25.5 dBm TYP @ P1 dB PACKAGE OUTLINE 75 • HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz • HIGH EFFICIENCY: 35% TYP @ 14.5 GHz +0.15 -0.05 2 PLACES φ 1.8

30349

Abstract: 136423
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R275, NE960R575 0.2/0.5 W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NE960R275 and NE960R575 are 0.2/0.5 W GaAs MESFETs designed for middle power transmitter applications for X, Ku-band microwave communication systems. It is capable of delivering 0.2/0.5 watt of output

Contextual Info: PRELIMINARY DATA SHEET 0.2W X, Ku-BAND POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NE960R275 Units in mm • HIGH OUTPUT POWER: 25.5 dBm TYP & Pi dB • HIGH LINEAR GAIN: 9.0 dB T Y P 14.5 GHz PACKAGE OUTLINE 75 • HIGH EFFICIENCY: 35% TYP @ 14.5 GHz

NE960R2

Abstract: NE960R200 NE960R275 NE961R200
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear

Contextual Info: PRELIMINARY DATASHEET 0.2W X, Ku-BAND POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ NE960R275 Units in mm . HIGH OUTPUT POWER: 25 5 dBm TYP @ Pi dB PACKAGE OUTLINE 75 • HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz . HIGH EFFICIENCY: 35% TYP @ 14 5 GHz

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

NEM0899F01-30

Contextual Info: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of