MICROWAVE FET Search Results

WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Contextual Info: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single

6647a

Abstract: 2082-2700-00 560-7A50 attenuator 3dB DC 18GHz wiltron 6647A Microwave Generator SWR BRIDGE metal detector vlf HP-85
Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line

6647a

Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line

560-7A50

Abstract: 6647a Shielded Microstrip uhf microwave fet 2082-2700-00 7082 coil gold detector decibel meter Logarithmic Amplifier detector 18GHz series and parallel resonance
Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line

microwave transistor bfy193

Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG

SIEMENS MICROWAVE RADIO 8 GHz

Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

switches

Abstract: anzac mixers GAAS FET CROSS REFERENCE GAAS FET rf switch CROSS REFERENCE PIN DIODE DRIVER CIRCUITS PIN DIODE SPDT DRIVER CIRCUITS semiconductors cross reference TWD5032 Microwave PIN diode ANZAC CROSS REFERENCE
Contextual Info: RF & Microwave Switches Exceeding Expectations Spectrum Microwave, a leader in RF Component design, continues this rich microwave heritage with its line-up of broadband, high isolation switches. We believe that designing switches which exceed customer expectations

AC2092

Abstract: AC2091 M1-0412ME M1-0420ME UTO507 TL9014 M1_0412ME AC545 GPD462 AVANTEK utc5
Contextual Info: Teledyne / Cougar Cross Reference List Cougar SPECTRUM MICROWAVE Cougar SPECTRUM MICROWAVE Cougar SPECTRUM MICROWAVE AC105 ACH107 AP148 AC251 AC262 AC263 AC271 AC272 AC273 AC281 AC282 AC293 AP294 AC305 AC345 AC347 AP348 AR356 AC378 AC379 AC380 AC381 AC382

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

1658 NEC

Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

UPC8236

Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

371 fet

Abstract: TIM1414-4LA-371
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

MwT GaAs Device Technology

Abstract: Gunn Diode gunn effect fet dro 10 ghz system on chip x-band x-band dro
Contextual Info: MicroWave Technology, Inc. GENERAL INFORMATION MwT’s GaAs Device Technology MicroWave Technology Inc. was established in 1982 by two senior technologists with years of hands-on experiences in Gallium Arsenide GaAs epitaxial material growth and microwave device design and processes.

Contextual Info: Microwave Switch SP4T Broadband GaAs RF / Microwave Switch 1-10533 Frequency 10 MHz to 3 GHz Low Insertion Loss Fast Switching Integral TTL Drivers Temperature Range -40 to +85ºC The Pascall SP4T Broadband RF / Microwave Switch, first of a new series, uses

high power fet amplifier schematic

Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Contextual Info: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding

S9G66A

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB

Contextual Info: Microwave Switch SP4T Broadband GaAs RF / Microwave Switch 1-10533 Frequency 10 MHz to 3 GHz Low Insertion Loss Fast Switching Integral TTL Drivers Temperature Range -40 to +85ºC The Pascall SP4T Broadband RF / Microwave Switch, first of a new series, uses

GaAs FET amplifer

Abstract: AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N
Contextual Info: MicroWave Technology, Inc. MICROWAVE AMPLIFIERS Standard Amplifier Capability MicroWave Technology, Inc. has been a leading manufacturer of high performance amplifiers since it was founded in 1982. MwT’s principal strengths are derived from an in-house quarter micron Gallium Arsenide device

Contextual Info: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of

Contextual Info: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET Non-Matched S9666A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25° C Ì CHARACTERISTICS Output Power at IdB Compression Point Power Gain at IdB Compression Point Drain Current

TPM2323-60

Contextual Info: MICROWAVE POWER GaAs FET TPM2323-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=48.0dBm at 2.4GHz „ HIGH GAIN G1dB=10.0dB at 2.4GHz „ PARTIALLY MATCHED TYPE „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS

S9G08A

Abstract: 2-16G6A
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S9G08A TECHNICAL DATA FEATURES LOW DISTORTION PARTIALLY MATCHED TYPE HIGH GAIN G idB = 13 dB HERMETICALLY SEALED PACKAGE Padj = -74 dBc@ Po = 38 dBm RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS