MICRON DDR Search Results

Micron Technology

Contextual Info: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and

Contextual Info: ADVANCE 128Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks M T46V8M 16 - 2 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html

Contextual Info: ADVANCE 64Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks M T46V4M 16 - 1 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html

toshiba tc110g

Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective

Contextual Info: Micron Confidential and Proprietary Advance‡ 256MB, 512MB, 1GB x64, DR : 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT8HSF3264HD – 256MB MT8HSF6464HD – 512MB MT8HSF12864HD – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com/ddr2

IDT ZBT SRAM 1994

Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code
Contextual Info: B u y e r s Volume 7, Issue 4 Product and service news for Micron customers 4Q00 MBN Extra: Micron Unveils New Corporate Brand “Micron Buyers News Extra” is your opportunity to hear from Micron’s management team This newsletter contains forwardlooking statements regarding the company and the industry. These particular

Contextual Info: ADVANCE‡ MICRON CONFIDENTIAL AND PROPRIETARY 128MB, 256MB x64 200-PIN DDR SODIMM SMALL-OUTLINE DDR SDRAM MODULE MT8VDDT1664H – 128MB MT8VDDT3264H – 256MB For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds Figure 1: 200-Pin SODIMM (MO-224)

Contextual Info: ADVANCE 64Mb: x32 DDR SDRAM MICRON' I TECHNOLOGY, INC. DOUBLE DATA RATE SDRAM MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec­

Contextual Info: ADVANCE 512K x 32 DDR SGRAM MICRON I TECHNOLOGY, INC. MT45V512K32 - 128K x 32 x 4 banks DOUBLE DATA RATE SGRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec­

pic 8259

Abstract: sus_stat_n rtc backup battery circuit 2h48
Contextual Info: PRELIMINARY‡ MT8LLN22NCNE COPPERTAIL 21PAD/22NCN Chipset Overview MT8LLN22NCNE Peripheral Bus Controller For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. GENERAL DESCRIPTION The Micron 21PAD/22NCN chipset consists of two

Contextual Info: 4’8 MEGx32 MICRON* I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View

MT4LSDT1664HI133

Abstract: MT48LC16M32 MT4LSDT1664HI MT8LSDT6464HI-133 MEG32 MT48LC8M32 MT48LC4M32B2F5 MT48LC4M32LFF5 MT46V64M8FN MT8LSDT6464HI
Contextual Info: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides

Contextual Info: ADVANCE 64 MEG: x8 DDR SDRAM MICRON I TECHNOLOGY, INC. MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec­

TN-47-07

Abstract: Micron TN-47-01 DDR2-533 TN-47-01
Contextual Info: TN-47-07: DDR2 Simulation Support Introduction Technical Note DDR2 Simulation Support Introduction Micron provides extensive design support tools for system designers. For example, Micron’s recently released technical note “DDR2-533 Memory Design Guide for TwoDIMM Unbuffered Systems,” TN-47-01 enables board designers to develop a set of

Contextual Info: ADVANCE MICRON 16 M EGx72 • DDR REGISTERED SDRAM DIMM MT18LDDT1672 DDR SDRAM DIMM MODULE F or the latest full-length data sheet, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/ datasheet.htm l FEATURES • • • • 184-pin dual in-line memory module DIMM

Contextual Info: ADVANCE MICRON 32 M EGx72 • REGISTERED SDRAM DIMM MT36LSDT3272 SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet, html PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES

Contextual Info: ADVANCE MICRON 64 M EGx72 • REGISTERED SDRAM DIMM MT36LSDT6472 SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet, html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM

micron ddr3

Abstract: NANYA 42Nm nanya ddr3 42-NANOMETER x1008
Contextual Info: FOR IMMEDIATE RELEASE Contacts: Kirstin Bordner Micron Technology, Inc. 208 368-5487 Dr. Pei Lin Pai Nanya Technology Corporation 886-3-3281688 x1008 kbordner@micron.com plpai@ntc.com.tw MICRON, NANYA UNVEIL 42-NANOMETER DRAM PROCESS TECHNOLOGY – REDUCES MEMORY POWER CONSUMPTION, INCREASES PERFORMANCE

MTFC4GACAANA-4M IT

Abstract: MTFC4GACAANA MTFC8GACAANA-4M IT micron marking code information MTFC8GLDDQ-4M IT MTFC4GAC MTFC4GACA JESD84-B451 4gb nand flash MTFC4G MTFC4GACAANA-4M
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 4GB, 8GB: e•MMC Features e·MMC Memory MTFC4GACAANA-4M IT, MTFC8GACAANA-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball TBGA (RoHS compliant, "green" package)

N2B3

Contextual Info: 2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb TwinDie DDR3 SDRAM uses Micron’s 1Gb

5Bp smd transistor data

Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
Contextual Info: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a

MT41J512M8

Abstract: "2Gb DDR3 SDRAM" MT41J256M8 MT41J1G4 srt 8n 2Gb DDR3 SDRAM twindie MT41J512 DDR3-1066 DDR3-1333 MT41J512M4
Contextual Info: 4Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41J512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 4Gb TwinDie DDR3 SDRAM uses Micron’s 2Gb

MT41J256M8

Abstract: 2Gb DDR3 SDRAM twindie MT41J512M4 srt 8n MT41J256m8 fbga MT41J256M4 "DDR3 SDRAM" DDR3-1066 DDR3-1333 MT41J128M8
Contextual Info: 2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb TwinDie DDR3 SDRAM uses Micron’s 1Gb

MT47H32M16

Abstract: micron marking MT47H FBGA 320 DDR2 16 meg x16 micron FBGA SDRAM marking micron ddr2 FBGA 84 32M16 Micron 32M16
Contextual Info: Micron Confidential and Proprietary 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks For functional and parametric specifications, refer to the product data sheet on Micron’s Web site: www.micron.com