MGF0917A Search Results

MGF0917A Datasheets (2)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGF0917A		Mitsubishi	TRANS JFET N-CH 10V 200MA 3HERMETIC	Original	PDF	44.8KB	4
MGF0917A		Mitsubishi	L & S BAND GaAs FET	Original	PDF	86.45KB	3

MGF0917A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGF0917A Abstract: gp 801 pt 11400 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm	Original	mgf0917a 24dbm 50pcs gp 801 +1pt 11400	PDF
MGF0917A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm	Original	mgf0917a 24dbm 50pcs june/2004	PDF
4511 gm Abstract: MGF0917A Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0917A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=24dBm TYP. @ f=1.9GHz,Pin=4dBm	OCR Scan	mgf0917a 24dbm 4511 gm	PDF
gm 4511 Abstract: GP 841 Diode MGF0917A scl 1444 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm	Original	mgf0917a 24dbm gm 4511 gp 841 diode +1scl 1444	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0917A L & S BAND / 0.25W SMD non - matched DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm	Original	mgf0917a 24dbm 50pcs	PDF
GP 841 Diode Abstract: 4511 gm GG SMD MGF0917A K 3561 fet 2255 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm	Original	mgf0917a 24dbm gp 841 diode 4511 gm +3gg smd k 3561 fet 2255	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0917A L & S BAND / 0.25W SMD non - matched DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm	Original	mgf0917a 24dbm 50pcs	PDF
MGF4919G Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии	Original	spp02n60 spp03n60 spp04n60 spp07n60 +13spp11n60 spp20n60 spw11n60 spw20n60 spw47n60 spp02n80 mgf4919g sp*02n60 spp11n80 to-220 smd mgf1601 mgf0905a spw11n80	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF