MG30G Search Results

MG30G2YM1

Abstract: LD30A
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

MG30G6EL1

Abstract: transistor 30A 600v tf s 544 a
Contextual Info: QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.

MG30G1BL3

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G1BL3 HIGH POWER SWITCHING APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . High DC Current Gain : hFE=100 Min. (Ic= 30A) . Low Saturation Voltage: VcE(sat)=2V(Max.)(Ic=30A) . High Speed : tf=2/js(Max.) (Ic=30A)

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

MG30G6EL1

Abstract: mg30g6
Contextual Info: MG30G6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O W ER SWIT C HI N G A PPLICATIONS. M OT O R CONTROL APPLICATIONS. FE ATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.

Contextual Info: — aSSSfwus o,FFusEpTYPE— MG30G6EL9 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hpE=100 Min. (Ic=30A)

MG30G2YL1

Contextual Info: MG30G2YL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpE=100 Min. (1^=3

mg30g2

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain:

MG30G1BL2

Abstract: 40mR
Contextual Info: Sb T O S H I B A -CDISCRETE/OPTOl 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S O 5e>C 08207 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE)_ D0DÖ207 r- Ü MG30G1BL2 H G I H P O W E R SI-ITCHING A P P L I C A T I O N S . Unit in mm FEATURES:

MG50G2

Contextual Info: dF TOSHIBA íDI SC RE TE /OPT O> 90D 16006 9097 250 T O S HI BA DISCRETE/OPTO TO SH IB A I t OTTHSD DDlbQDt, 1 J ~ SEMICONDUCTOR r-3J-3S~ TOSHIBA GTR MODULE MG30G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG30G2DM1

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm M OTOR CONTROL APPLICATIONS. FEATURES: 4 - F A S T - ON TAB # 1 1 0 . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode.

MG30G6EL2

Abstract: EGA-HG30G6EL2-1 TOSHIBA bat dt60A toshiba free wheeling diode
Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA GTR MODULE MG30G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES! . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.

MG30G1BL3

Abstract: MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815 2SD650 2SD649 2SD646A
Contextual Info: - m « Type No. tt « Manuf. = B ;¥ SANYO TOSHIBA K s 2SD 646 — • Ä $ MG50G1BL3 2SD 646A M $ MG30G1BL3 2SD 647 K 2: 2SD647A 2SD 648 Ä 3* 2SD648A 2SD 649 * 2 2SD 650 - s a 2SD 654 3 * 2SD545 2SD 655 . B ÎL 2SD1012 2SD 656 Ä S 2SD 657 * $ 2SD 661 fâ

MG30G6EL2

Contextual Info: GTR MODULE_ SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.

Contextual Info: MG30G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20

Contextual Info: MG30G6EL9 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A P P L ICATIONS. . The Collector Is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Jain

MG30G2DL1

Abstract: MG30G2DL
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G2DL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=30A)

MG30G2CL3

Abstract: DC motor control 30A
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package, . High DC Current Gain : hpE=100 Min. (Ic=30A)

2sk1029

Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1
Contextual Info: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1

MG30G1BL4

Abstract: mg30g1 2-33F1A MG30 mg30g
Contextual Info: TOSHIBA GTR MODULE SEMICONDUCTOR T O S H IB A TECHNICAL MG30G1 B L 4 SILICON NPN TRIPLE DIFFUSED TYPE DATA M G 30Ü 10L4 HIGH POWER SWITCHING APPLICATIONS. • • • • The Collector is Isolatedfrom Case. High DC Current Gain : hjvE = 100 (Mixi.) (Iq = 30A)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

MG30G2CL3

Abstract: MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29
Contextual Info: -219% £ CK-3 Cl O B1 Bl El/C 2 E1/C2 62 & 3 . ;U -K Ta=25t m s Ts'i (V) (us) IB VcE V BE t St 9 t rr V f I B1 t on I B2 tf I f C//s) IF (A) fi * (A) V BE di/dt ccm ^ fifi mm Wi-F SP m g b m ^ £ fi Á (H) IS * 3.5 15 0.3 2 h 6 0.3 -0.9 600 40 1.5 15 1.0