MG300Q Search Results

300Q1US41

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V

Tag 676 800

Contextual Info: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •

Contextual Info: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)

MG300Q2YS50

Abstract: 300AT
Contextual Info: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage

MG300Q1US51

Abstract: MG300Q1
Contextual Info: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)

MG300Q1US41

Contextual Info: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)

Contextual Info: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

MG300Q2YS61

Abstract: toshiba G2 MG300Q2YS
Contextual Info: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)

MG300Q2YS61

Abstract: MG300Q2YS
Contextual Info: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)

Contextual Info: TOSHIBA MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 u S 51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage • V c e (sat) —3.6V (Max.)

Contextual Info: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage

mg30

Abstract: MG300Q1US51 P channel 600v 300a IGBT
Contextual Info: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)

Contextual Info: T O S H IB A MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 /«s Max. Inductive Load • Low Saturation Voltage

MG300Q2YS65H

Contextual Info: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

Contextual Info: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: MG300Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 300 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA

MG25M1BK1

Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
Contextual Info: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400

Contextual Info: T O S H IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTRO L APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage

Contextual Info: T O SH IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G300Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

jSw Diode

Contextual Info: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

MG300Q1US11

Abstract: GE-540 GE-54 221D
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300Q1US11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .O^s Max. • Low saturation voltage: = 0 .5 n s (Max.)

Contextual Info: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

MG300Q1US41

Abstract: S60C
Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US 4 1 HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5/^s (Max.) Low Saturation Voltage : V c E (sa t) = 4.0V