ME-WF SERIES Search Results

ME-WF Series

Abstract: Sanyo me-wf MV-WG MV-WG Series mv-wf series mv-wf
Contextual Info: Aluminum Electrolytic Capacitors ME-WF Series Super Low ESR • Features ・Super Low ESR and high ripple current at high frequency. ・MV-WF series reduced high-frequency ESR to 25～40% as compared with MV-WG series. ■ Specifications Items Operating temperature range

Contextual Info: r n M ini-Circuits Surface Mount S pdt DC to 2 GHz MSW MSWA MSWT Wfàm Aa me i 1d& C O M P* .dBm . ÏN5EBTION LOSS, CtB s Ö. im MODEL NO. MSW-2-2D MSWA-2-2D i V E DC-2.D DC-2.D CAPD W M d PRICE . 0 A IÀ STYLE vH. IW-OUT ISOLATION* dB n s :C>:

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.

BPX38

Abstract: flux meter glass lens phototransistor
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)

FMC16LX

Abstract: MB90F462 FMC-16LX MB90F387 MC-16LX MB90F4
Contextual Info: FUJITSU SEMICONDUCTOR ＣＯＮＴＲＯＬＬＥＲ ＭＡＮＵＡＬ XXXX-XXXX-XX-E F²MC-16 FAMILY 16-BIT MICROCONTROLLER An Additional Manual for the Softune Linkage Kit F²MC-16LX Standby Mode Transition Instruction Check FUJITSU LIMITED PREFACE •Objectives and Intended Readership

CK 66 94V-0

Abstract: CK 66 UL 94V-0 ml 94v-0 CK 66 3 94V-0
Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONIC AND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION

Contextual Info: Metallized Polypropylene Capacitor for Motor Running & Lighting Ballast ECWFJfc ECWF Series LTt&ft;? A compact, light-weight capacitor designed for use in motor running and in electrical equipment such as lighting, etc. Non-inductive type using metallized polyplopylene

Halbleiterbauelemente DDR

Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.

Panjit p6smb

Abstract: P6SMB10 P6SMB10A P6SMB11 P6SMB11A
Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 214 Volts PEAK PULSE POWER 600 Watts SMB/DO-214AA Unit: inch mm FEATURES .083(2.11) .185(4.70) .160(4.06) .083(2.13) .096(2.44) .012(.305) .006(.152) MECHANICAL DATA • • • • •

yx 861

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 6.8 to 550 Volts BREAK DOWN VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 6.8 to 550 Volts BREAK DOWN VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction

P6SMB10

Abstract: P6SMB10A P6SMB11 P6SMB11A P6SMB12
Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 6.8 to 550 Volts BREAK DOWN VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction

yx 861

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 6.8 to 550 Volts BREAK DOWN VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction

L422

Abstract: 93422 93L422
Contextual Info: Order this data sheet by 9342ZD MOTOROLA SEMICONDUCTOR TECHNICAL DATA TTL 256 x 4-Bit Random Access Memory W ‘s$l:., “’:P$*.V? .‘ ,<$}.,3, ~~,}, >,., The 93422 Series are 1024-bit ReadWrite RAMs, organized 256 words by 4 bits, designed for high performance main memory and control storage

Contextual Info: SUNCON o > Q ?• g i. 3 m a • 10 5 t!, 2,000 to 7,000hrs. • Solvent proof within 5 minutes) 3 * n ■ Specifications Item s Specifications i Condition Rated vo lta g e (V) - 6 .3 10 16 25 35 CE-BE Surge vo lta g e (V) 8 .0 13 20 32 44 CE-BD Category temperature range CP)

Contextual Info: P4SMAJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.0 to 220 Volts PEAK PULSE POWER 400 Watts SMA/DO-214AC Unit: inch mm FEATURES • For surface mounted applications in order to optimize board space. .114(2.90) .098(2.50) • Low profile package

S1D13305

Abstract: graphic intel 8085A instruction set s1d13305f00b1 S1D13305F00A interfacing of RAM and ROM with 8085 S1D13305F 8085 Manual S1D13305F00B intel 8085 instruction set
Contextual Info: MF1167-02 LCD Controller ICs S1D13305 Series Technical Manual No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

SK2756

Contextual Info: SK2758 POSm tOMC M 0U5TNES BELIEVES t h e d a ta o n 1H B DRAWING TO BE RELHBLE. SM C E THE TECHNICAL MPORUKnON IS OVEN FREE OF CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H IS OWN DISCRETION AND RBK. POSITRON1C M DU5TRES A S S IlffS NO RESPONSE UTY FOR RESULTS OBIMNED OR DAMAGES

Contextual Info: SUNCON Aluminum Electrolytic Capacitors • 1051C, 2.500 to 10.OOOhrs. • Solvent proof within 5 minutes • Specifications Items Condition Specifications Rated vo lta g e (V) - 6 .3 10 16 Surge vo lta g e (V) Room tem perature 8 .0 13 20 Category temperature range fC )

reliability Va12

Abstract: S1D13305 S1D13305F00 S1D13305F
Contextual Info: MF1167-03 LCD Controller ICs S1D13305 Series Technical Manual No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

Contextual Info: HM53051 Series 262,144-Word x 4-Bit Frame Memory • DESCRIPTION HM53051P Series HM53051P is a 262,144-word x 4-bit frame memory, using the most advanced 1.3 jjim CMOS processes. It performs serial access by an internal address genera­ tor. It offers a high-speed cycle time of 45 ns or 60 ns min . As input data and out­

S1D13305

Abstract: D 8085 AHC Epson-S1D13305 s1d13305f
Contextual Info: MF1167-03 LCD Controller ICs S1D13305 Series Technical Manual No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

BXA30

Abstract: WS 90 XL750 XL50 NFN25
Contextual Info: AC/DC PRODUCT SELECTION CHART BY FEATURES CO ¡S u_ 111 III 00 SWITCHERS AND LINEARS SWITCHERS IAJ OPEN FRAME ENCUOSED ENCAPSULATED Universal Input Conventional 115/220 Input Universal Input Conventional 115 or 220 Input Conventional 115 or 220 Input One model works

Contextual Info: HM51W17800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-275C Z Rev. 3.0 Jul. 5, 1996 Description The Hitachi HM51W17800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800B offers