MCH182C Search Results

SOF-26

Abstract: SZP-3026Z
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

MCH185A221JK

Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
Contextual Info: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits

date code marking capacitor samsung

Abstract: Novacap 220nF 0402 100nf Capacitor 0201 0402 100nF waffle s2l 06 capacitor 100nf 16v x7r 10 1005 murata CL10B104 MLCC CRACK CAP SMD X7R 100NF 50V 10 CODE PJ 62-00
Contextual Info: Multilayer Ceramic Capacitor - General - Multilayer Ceramic Capacitor - General • INTRODUCTION MLCC Multilayer Ceramic Capacitor is SMD(Surface Mounted Device) type capacitor that is used in wide ranges of capacitance. MLCC is paid more attentions than other capacitors due to the

capacitor 361j

Abstract: capacitor 152j R265A 48 H diode marking code 102j transistor 010C MCH184FN225Z MCH185CN682K marking 330j 020C
Contextual Info: MCH18 Ceramic capacitors Multi-layer ceramic chip capacitors MCH18 1608 (0603 size, chip capacitor) zFeatures 1) Miniture, light weight 2) Achieved high capacitance by thin and multi layer technology 3) Lead-free plating terminal 4) No polarity zQuick Reference

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,

Contextual Info: TECHNICAL NOTE Power Management Switch IC Series for PCs and Digital Consumer Product Power Switch for TM ExpressCard BD4155FV ●Description TM BD4155FV is a power management switch IC for the next generation PC card ExpressCard developed by the PCMCIA.

MCH185C332K

Abstract: MCH155F103Z mch184cn224k MCH153F104Z
Contextual Info: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.

MCH182F104ZK

Abstract: gsm module datasheet DCS1800 ECM007 EGSM900 MCH185A180JK C5611 ecshi Power Amplifier Module for GSM MCH185A330JK
Contextual Info: PRELIMINARY DATA SHEET ECM007 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally input and output matched High Efficiency EGSM=55%, DCS= 50% Small size On Board band select and output power control

BD9883

Abstract: BD9883AF BD9883FV BD9883F 217T146 GRM42A5C3F220J DAN217T146
Contextual Info: TECHNICAL NOTE Inverter Control ICs for Large LCD Backlight Wire Wound Electronic Transformer Inverter Control IC for LCD Panel 10" to 15" BD9883AF/FV zDescription These inverter ICs feature a built-in half-bridge control circuit and can be controlled with a single n-type MOSFET. They are

SZA-2044

Abstract: SZA-3044 SZA-3044Z SZA-5044
Contextual Info: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5 V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

BD4154FV

Abstract: RV15 SSOP-B20 TV15
Contextual Info: Power Management Switch IC Series for PCs and Digital Consumer Product Power Switch IC for ExpressCardTM BD4154FV No.09029EAT09 ●Description TM BD4154FV is a power management switch IC for the next generation PC card ExpressCard developed by the PCMCIA.

MCH185A3R9DK

Abstract: SZM-3166Z SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z
Contextual Info: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

SOF-26

Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

SPF-3043

Abstract: SPF-3143 SPF 188 AN066 3143 LL1608-FS3N9S LL1608-FS4N7S MCH182CN104KK MCH185A150JK ML200C
Contextual Info: DESIGN APPLICATION NOTE - AN-066 SPF-3143 Amplifier Application Circuits Abstract This application note is intended to provide a reference point for an amplifier circuit design using Sirenza Microdevices’ SPF-3143 at 1960 MHz, in both dualbiased and self-biased configurations.

Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip

Contextual Info: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,

date code marking capacitor samsung

Abstract: MLCC X8R murata rohm mch GRM 1206 NP0 samsung p-6800
Contextual Info: Multilayer Ceramic Capacitor - High Voltage - Multilayer Ceramic Capacitor - High Voltage • INTRODUCTION SAMSUNG Electro-Mechanics mid/high voltage MLCC products with C0G(NP0) and X7R temperature characteristics are designed for commercial and industrial applications up to DC 3 KV,

600S4R7

Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

vpc3 c

Abstract: RF transistor gain 20dB vpc3
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

MCH18

Abstract: ZO13 0805HQ-5N6XJBB
Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,

MCH182CN104

Contextual Info: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

dk39

Abstract: SZM-2166 szm2166 SZM2166ZSR 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic
Contextual Info: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

SZP-5026-HWD

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

Contextual Info: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,