MCH185A3R9DK Search Results

SOF-26

Abstract: SZP-3026Z
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

MCH185A3R9DK

Abstract: SZM-3166Z SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z
Contextual Info: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

Contextual Info: SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier SZP-3026Z Preliminary 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor

Contextual Info: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,

vpc3 c

Abstract: RF transistor gain 20dB vpc3
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

SZP-3026Z

Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

600S100JW250X

Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

MCH182CN

Abstract: SZM-3166Z recommended land pattern for 0402 cap
Contextual Info: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

3.5GHz BJT

Abstract: cpe wimax
Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

vpc3-c

Abstract: vpc3 c SZM-3066Z c2a marking recommended land pattern for 0402 cap
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

Contextual Info: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features     RFPA3026 P1dB =33.6dBm at 5V RF IN 802.11g 54Mb/s Class AB Performance On-Chip Output Power Detector  Input Prematched to ~5

vpc3 c

Abstract: vpc3-c MCH182C SZM-3066Z vpc3 s
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This