MBB01B Search Results

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

BF660

Abstract: marking IAY
Contextual Info: •I tbS3T31 0D24b71 22b H A P X N AMER PHILIPS/DISCRETE BF660 b7E » SILICO N PLANAR T R A N SIST O R P-N-P transistor, in a m icrom iniature plastic envelope; intended fo r use as oscillator in v.h.f. tuners w ith extended frequency range and/or in conjunction w ith M O S - F E T s in thick and thin-film circuits.

Contextual Info: • bb53^31 D0S4704 STS B A P X N AMER PHILIPS/DISCRETE BF821 BF823 b?E D J V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N

Contextual Info: bbSBTBl 00245=17 b51 « A P X N APIER PHILIPS/DISCRETE BCX17 BCX18 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope, intended fo r application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications

to 92 dimensions

Abstract: BF484 BF486 BF488
Contextual Info: b3E J> m BF484 BF486 BF488 □□7H2ÔM b77 • SIC 3 N A P C /P H I L IP S SEPIICOND FOR D E T A IL E D IN F O R M A T IO N SEE THE LATEST ISSUE OF HAN D BO O K SC04 OR D ATASH EET SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a TO-92 envelope and intended for use in video output stages of black and

Contextual Info: BF569 _ J v_ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with

bcb57b

Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
Contextual Info: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80