MARKING Y2 TRANSISTOR Search Results

Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6

2N60 transistor

Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

Contextual Info: 2DB1697 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes

DFN1310H4-6

Contextual Info: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

P13Q

Abstract: Y1 SOT-89 2DB1132 marking y1 sot-89 sot-89 marking y1
Contextual Info: 2DB1132P/Q/R 32V PNP SURFACE MOUNT TRANSISTOR IN SOT-89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -32V Max Continuous Current IC = -1A Epitaxial Planar Die Construction Complementary NPN Type Available 2DD1664

N13R

Abstract: N13x N13Q
Contextual Info: 2DD1664P/Q/R 32V NPN SUFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 32V Max Continuous Current IC = 1A Epitaxial Planar Die Construction Complementary PNP Type Available 2DB1132

Contextual Info: 2DB1188P/Q/R 40V PNP SURFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Complementary NPN Type Available 2DD1766 Ideally Suited for Automated Assembly Processes

FZT789AQTA

Abstract: FZT789A-PNP fzt 655 FZT789A
Contextual Info: A Product Line of Diodes Incorporated Green FZT789A PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -25V Maximum continuous current IC cont = -3A Very Low Saturation Voltage

BS9365

Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

FZT751

Abstract: FZT751Q FZT751QTA sot223 transistor pinout
Contextual Info: A Product Line of Diodes Incorporated Green FZT751 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features • • • • • • • Mechanical Data • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage

DXT2011

Abstract: DXT2011P5 DXT2011P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2011P5 ADVANCE INFORMATION 100V NPN LOW SAT MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT458

Abstract: DXT458P5 DXT458P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT458P5 ADVANCE NEWINFORMATION PRODUCT NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT5551P5-13

Abstract: DXT5551 DXT5551P5
Contextual Info: A Product Line of Diodes Incorporated DXT5551P5 ADVANCE INFORMATION 160V NPN HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 2.25W

Contextual Info: A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •          BVCEO > 25V IC = 3A High Continuous Current ICM = 8A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current Low Saturation Voltage 150mV max @ 1A

FZT651

Abstract: transistor fzt651 FZT marking code FZT651QTC fzt651tc FZT651TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage

Contextual Info: BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > -45V, -60V & -80V   IC = -1A High Continuous Collector Current   ICM = -2A Peak Pulse Current   2W Power Dissipation Low Saturation Voltage VCE sat < -500mV @ -0.5A

Contextual Info: BCX54 /55 /56 NPN MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data •  BVCEO > 45V, 60V & 80V Ic = 1A Continuous Collector Current           ICM = 1.5A Peak Pulse Current Low Saturation Voltage VCE sat < 500mV @ 0.5A

smd transistor marking y2

Contextual Info: Transistors Transistor T SMD Type Product specification KST8550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Collector Current: IC=-1.5A 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

date code marking NEC

Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

NCP623

Abstract: marking code y2 SMD Transistor MARKING SMD PNP TRANSISTOR Y2 TRANSISTOR SMD MARKING CODE y2 TRANSISTOR SMD MARKING CODE mf smd transistor marking y2 transistor smd Y2 y1 TRANSISTOR SMD MARKING CODE marking codes LXX 05 NCP623DM
Contextual Info: NCP623 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control The NCP623 low dropout linear regulator can deliver up to 150 mA of output current with a typical dropout voltage of 180 mV. This low dropout feature helps to maintain a regulated output voltage for a

Contextual Info: MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data •          BVCEO > 100V IC = 3A high Continuous Collector Current ICM = 5A Peak Pulse Current Ideal for Power Switching or Amplification Applications Complementary PNP Type: MJD32C

RN1130MFV

Abstract: RN2130MFV
Contextual Info: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process z Complementary to RN1130MFV