MARKING Y2 TRANSISTOR Search Results
MARKING Y2 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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54F350/BEA |
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54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA) |
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5962-8672601EA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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54F151/BEA |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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5962-8672601FA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) |
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54F151/B2A |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) |
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MARKING Y2 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 Features Marking Symbol : Y2 1.4 1.6 |
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TT4-EA-13066 FL6L52060L UL-94 | |
2N60 transistor
Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
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MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 | |
Contextual Info: 2DB1697 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes |
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2DB1697 2DD2661) OT89-3L J-STD-020D MIL-STD-202, DS31618 621-2DB1697-13 2DB1697-13 | |
DFN1310H4-6Contextual Info: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package |
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BC847CDLP DFN1310H4-6 J-STD-020C MILSTD-202, DS30817 621-BC847CDLP-7 BC847CDLP-7 | |
P13Q
Abstract: Y1 SOT-89 2DB1132 marking y1 sot-89 sot-89 marking y1
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2DB1132P/Q/R OT-89 2DD1664) J-STD-020 OT-89 2DB1132P-acknowledge DS31142 P13Q Y1 SOT-89 2DB1132 marking y1 sot-89 sot-89 marking y1 | |
N13R
Abstract: N13x N13Q
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2DD1664P/Q/R 2DB1132) AEC-Q101 J-STD-020 DS31143 N13R N13x N13Q | |
Contextual Info: 2DB1188P/Q/R 40V PNP SURFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Complementary NPN Type Available 2DD1766 Ideally Suited for Automated Assembly Processes |
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2DB1188P/Q/R 2DD1766) AEC-Q101 J-STD-020 MIL-STD-20 DS31144 | |
FZT789AQTA
Abstract: FZT789A-PNP fzt 655 FZT789A
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FZT789A OT223 FZT689B AEC-Q101 OT223 J-STD-020 DS33168 FZT789AQTA FZT789A-PNP fzt 655 FZT789A | |
BS9365
Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
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BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6 | |
FZT751
Abstract: FZT751Q FZT751QTA sot223 transistor pinout
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FZT751 OT223 FZT651 AEC-Q101 OT223 J-STD-020 FZT751TA FZT751QTA FZT751TC FZT751 FZT751Q sot223 transistor pinout | |
DXT2011
Abstract: DXT2011P5 DXT2011P5-13
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DXT2011P5 OT223; J-STD-020 MIL-STD-202, DS32069 DXT2011 DXT2011P5 DXT2011P5-13 | |
DXT458
Abstract: DXT458P5 DXT458P5-13
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DXT458P5 OT223; 300mA; J-STD-020 MIL-STD-202, DS32067 DXT458 DXT458P5 DXT458P5-13 | |
DXT5551P5-13
Abstract: DXT5551 DXT5551P5
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DXT5551P5 OT223; J-STD-020 MIL-STD-202, DS32066 DXT5551P5-13 DXT5551 DXT5551P5 | |
Contextual Info: A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 25V IC = 3A High Continuous Current ICM = 8A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A |
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FZT649 OT223 300mV FZT749 AEC-Q101 J-STD-020 MIL-STD-202nd DS33148 | |
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Contextual Info: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current Low Saturation Voltage 150mV max @ 1A |
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ZXTN618MA 150mV AEC-Q101 DFN2020B-3 DS31890 621-ZXTN618MATA ZXTN618MATA | |
FZT651
Abstract: transistor fzt651 FZT marking code FZT651QTC fzt651tc FZT651TA
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FZT651 OT223 FZT751 AEC-Q101 OT223 J-STD-020 FZT651TA FZT651QTA FZT651TC FZT651 transistor fzt651 FZT marking code FZT651QTC | |
Contextual Info: BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > -45V, -60V & -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE sat < -500mV @ -0.5A |
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OT223 -500mV J-STD-020 MIL-STD-202, BCP54, DS35366 | |
Contextual Info: BCX54 /55 /56 NPN MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > 45V, 60V & 80V Ic = 1A Continuous Collector Current ICM = 1.5A Peak Pulse Current Low Saturation Voltage VCE sat < 500mV @ 0.5A |
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BCX54 500mV BCX51, AEC-Q101 J-STD-020 DS35369 | |
smd transistor marking y2Contextual Info: Transistors Transistor T SMD Type Product specification KST8550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Collector Current: IC=-1.5A 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 |
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KST8550 OT-23 -50mA 30MHz smd transistor marking y2 | |
date code marking NEC
Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
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NE685M33 NE685M33-T3 date code marking NEC NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR | |
IC 630Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • |
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ZXTC6717MC 100mV -140mV DS31926 IC 630 | |
NCP623
Abstract: marking code y2 SMD Transistor MARKING SMD PNP TRANSISTOR Y2 TRANSISTOR SMD MARKING CODE y2 TRANSISTOR SMD MARKING CODE mf smd transistor marking y2 transistor smd Y2 y1 TRANSISTOR SMD MARKING CODE marking codes LXX 05 NCP623DM
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NCP623 NCP623/D NCP623 marking code y2 SMD Transistor MARKING SMD PNP TRANSISTOR Y2 TRANSISTOR SMD MARKING CODE y2 TRANSISTOR SMD MARKING CODE mf smd transistor marking y2 transistor smd Y2 y1 TRANSISTOR SMD MARKING CODE marking codes LXX 05 NCP623DM | |
Contextual Info: MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data • BVCEO > 100V IC = 3A high Continuous Collector Current ICM = 5A Peak Pulse Current Ideal for Power Switching or Amplification Applications Complementary PNP Type: MJD32C |
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MJD31C MJD32C AEC-Q101 J-STD-020 DS31625 | |
RN1130MFV
Abstract: RN2130MFV
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RN2130MFV RN1130MFV RN1130MFV RN2130MFV |