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Catalog Datasheet	Type	Document Tags	PDF
HSB857J Abstract: a5 marking Contextual Info: HI-SINCERITY Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C • Maximum Temperatures	Original	HJ200101 HSB857J O-252 183oC 217oC 260oC HSB857J a5 marking	PDF

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HSB857J

Abstract: a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C • Maximum Temperatures

Original

HJ200101 HSB857J O-252 183oC 217oC 260oC HSB857J a5 marking

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