MARKING Y1 TRANSISTOR Search Results

ss8050 sot-23

Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

2N60 transistor

Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

TL 434

Abstract: y1 marking code transistor HSB1386J
Contextual Info: HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386J LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.

SS8050

Abstract: 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1
Contextual Info: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES      A L Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current

Contextual Info: 2DB1697 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes

DFN1310H4-6

Contextual Info: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

P13Q

Abstract: Y1 SOT-89 2DB1132 marking y1 sot-89 sot-89 marking y1
Contextual Info: 2DB1132P/Q/R 32V PNP SURFACE MOUNT TRANSISTOR IN SOT-89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -32V Max Continuous Current IC = -1A Epitaxial Planar Die Construction Complementary NPN Type Available 2DD1664

N13R

Abstract: N13x N13Q
Contextual Info: 2DD1664P/Q/R 32V NPN SUFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 32V Max Continuous Current IC = 1A Epitaxial Planar Die Construction Complementary PNP Type Available 2DB1132

2DC4672

Abstract: sot89 "NPN TRANSISTOR"
Contextual Info: 2DC4672 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available 2DA1797

Contextual Info: 2DB1188P/Q/R 40V PNP SURFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Complementary NPN Type Available 2DD1766 Ideally Suited for Automated Assembly Processes

BS9365

Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

FZT789AQTA

Abstract: FZT789A-PNP fzt 655 FZT789A
Contextual Info: A Product Line of Diodes Incorporated Green FZT789A PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -25V Maximum continuous current IC cont = -3A Very Low Saturation Voltage

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

DXT2011

Abstract: DXT2011P5 DXT2011P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2011P5 ADVANCE INFORMATION 100V NPN LOW SAT MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT458

Abstract: DXT458P5 DXT458P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT458P5 ADVANCE NEWINFORMATION PRODUCT NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT5551P5-13

Abstract: DXT5551 DXT5551P5
Contextual Info: A Product Line of Diodes Incorporated DXT5551P5 ADVANCE INFORMATION 160V NPN HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 2.25W

DXT790A

Abstract: DXT790AP5-13 DXT790AP5 dxt790
Contextual Info: A Product Line of Diodes Incorporated DXT790AP5 40V PNP HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 40V IC = 3A; ICM = 6A

Marking BA SOT89

Abstract: BCX5616TA BCX56TA bcx56-16t bcx54ta
Contextual Info: BCX 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction

fzt591a

Contextual Info: A Product Line of Diodes Incorporated Green FZT591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -40V IC = -1A high Continuous Current Low saturation voltage VCE sat < -500mV @ -1A

Contextual Info: A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •          BVCEO > 25V IC = 3A High Continuous Current ICM = 8A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A

FZT489QTA

Abstract: MARKING fzt
Contextual Info: A Product Line of Diodes Incorporated Green FZT489 30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 30V Max Continuous Current IC = 1A Low Saturation Voltage Complementary PNP Type: FZT589

BCP5616

Abstract: BCP5410
Contextual Info: BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > 45V, 60V & 80V   IC = 1A High Continuous Collector Current   ICM = 2A Peak Pulse Current   2W Power Dissipation Low Saturation Voltage VCE sat < 500mV @ 0.5A

Contextual Info: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current Low Saturation Voltage 150mV max @ 1A