MARKING V02 Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

VARIO switch

Abstract: vcfx-ge4 2 Pole 5 Position Rotary Switch VCF02GE VCFN-40GE VCFN-12GE 12GE "3 pole Rotary Switch" VCF-01GE switch disconnectors
Contextual Info: Safety solutions using Preventa References VARIO enclosed switch disconnectors pre-assembled Enclosed switch disconnectors for high performance applications 580571 b Marking on operator . b 3-pole rotary switch disconnectors from 10 to 140 A b Padlockable operating handle (padlock not included).

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

transistor marking MCs

Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
Contextual Info: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter

din 3141

Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
Contextual Info: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings

Contextual Info: BFS17W NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BCW66

Abstract: BFS17P E6327 marking code MCs
Contextual Info: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFS17P

Contextual Info: BFS17P NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

mar 806

Contextual Info: BFS17W NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFS17P

Contextual Info: BFS17P NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFS17W

Abstract: VSO05561
Contextual Info: BFS17W NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

VSO05561

Contextual Info: BFS 17W NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: BFS 17P NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

ctf 5510

Abstract: marking code x18 2QSP24 MO-137 2CTF-V01M-Q24R 2CTF-V02M-Q24R
Contextual Info: Features 24Q CTF M 6 V02 022 • ■ ■ Applications 18 RC terminators tied to a common node Stable thin-film-on-silicon technology Ultra-miniature packages to JEDEC standards ■ ■ ■ High-speed bus termination Low power consumption Ideal for space-constrained applications

2CTF-V01M-Q24R

Abstract: 2CTF-V02M-Q24R 2QSP24 MO-137 V06M ctf 5510
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E • 24Q CTF M 6 V02 022 *R Features ■ ■ ■ ■ Applications Lead free versions available RoHS compliant lead free version * 18 RC terminators tied to a common node Stable thin-film-on-silicon technology Ultra-miniature packages to JEDEC

marking v02

Abstract: HMC656LP2E
Contextual Info: HMC656LP2E to HMC658LP2E v02.0112 WIDEBAND FIXED ATTENUATOR FAMILY, DC - 25 GHz HMC656LP2E / HMC657LP2E / HMC658LP2E Typical Applications Features The HMC656LP2E - HMC658LP2E are ideal for: 3 Attenuator Products: 10, 15, & 20 dB Fixed Attenuation Levels • Fiber Optics

Contextual Info: HMC656LP2E TO HMC658LP2E v02.0112 WIDEBAND FIXED ATTENUATOR FAMILY, DC - 25 GHz HMC656LP2E / HMC657LP2E / HMC658LP2E Typical Applications Features The HMC656LP2E - HMC658LP2E are ideal for: 3 Attenuator Products: 10, 15, & 20 dB Fixed Attenuation Levels • Fiber Optics

HMC189MS8E

Abstract: H189 HMC189MS8 Rogers 4350 datasheet 189MS8E
Contextual Info: HMC189MS8 / 189MS8E v02.0505 FREQ. MULTIPLIERS - PASSIVE - SMT 7 GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 2 - 4 GHz INPUT Typical Applications Features The HMC189MS8 / HMC189MS8E is suitable for: Conversion Loss: 13 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 33 dB