MARKING TR SOT23 Search Results

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

MMBP6027

Abstract: sot-23 Marking KN Cross Reference sot23 5S sot-23 KN SOT23 Cross Reference sot motorola sot 23 package marking sot-23 body marking A c motorola surface mount marking code marking code 52 sot23 - 6
Contextual Info: M O T O R O L A SC - C D I O D E S / O P T O r ^ S m T | t,3 b 7 ESS 0 D 7 ä L 2 T Û y~. i f - ö j SOT-23 DEVICES Thyristors SILICO N C O N TR O LLED R E C T IFIER S Device Marking >F <mA VpxM ImA) •g t mA) 5R 5S 5T 500 500 500 25 50 100 200 200 200

BAS21 SOD323

Abstract: marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking BAS21 BAS21-03W BAS21U SOT23 SOD323 SC74 single single parallel triple

BAS21

Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

TK63733

Abstract: tk63718 TK63728 TK63730 TK637XXH TK637xxS TK63733H TK63729H D28 SOT23-5 TK63735H
Contextual Info: ［TK637xxB/H/S］ TK637xxH/S 150mA, Capacitor-less, Low IQ, CMOS LDO Regulator IC 1-. DESCRIPTION 4-. PIN CONFIGURATION The TK637xxH/S is a CMOS LDO regulator. The packages are the small and thin SON2017-6, and the extremely versatile SOT23-5. The IC is designed for portable applications with space

smd diode marking code a6

Abstract: 771-M771-MBD4148215 smd diode marking a6
Contextual Info: MMBD4148 High-speed switching diode Rev. 01 — 4 June 2009 Product data sheet 1. Product profile 1.1 General description High-speed switching diode, encapsulated in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. 1.2 Features • High switching speed: trr ≤ 4 ns

MMBD4148

Abstract: sot23-4 jt smd diode marking a6 smd diode marking code a6 diode marking code A6
Contextual Info: MMBD4148 High-speed switching diode Rev. 01 — 4 June 2009 Product data sheet 1. Product profile 1.1 General description High-speed switching diode, encapsulated in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. 1.2 Features • High switching speed: trr ≤ 4 ns

xt08

Abstract: WT16 crowbar st morocco tip 130
Contextual Info: DSL01-xxxSC5 Secondary protection for DSL lines Applications • ■ 4 Secondary protection to be located after the transformer of ADSL and VDSL modem either on central office or subscriber side. 5 1 SOT23-5L SC-59 Features ■ Low capacitance devices: – DSL01-008SC5: Delta Ctyp = 3 pF

UL26

Abstract: 6L-USBLC6-2SC6 USBLC6-2SC6 STMicroelectronics date code format ecopack SMP75-8 JESD97 marking illustrations
Contextual Info: USBLC6-2 Very low capacitance ESD protection Features • ■ ■ ■ ■ ■ 2 data lines protection Protects VBUS Very low capacitance: 3.5 pF max. Very low leakage current: 150 nA max. SOT-666 and SOT23-6L packages RoHS compliant SOT23-6L USBLC6-2SC6 Benefits

code marking JYs sot-23

Abstract: BCR847BF
Contextual Info: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 BAV199F 3 D 1 D 2 1 2 Type BAV199 BAV199F* Package SOT23 TSFP-3 Configuration series series Marking JYs JYs * Preliminary

A1s sot23

Abstract: BAW56S E6327 MARKING CODE A1s
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

UL26

Contextual Info: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.

PMBFJ111

Abstract: PMBFJ112 philips PMBFJ113 PMBFJ113 pmbfj111_112_113_
Contextual Info: PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features • High-speed switching ■ Interchangeability of drain and source connections

USBLC6-2

Abstract: UL26 USBLC6-2P6 marking illustrations
Contextual Info: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.

BAL99

Contextual Info: BAL99. Silicon Switching Diode
For high-speed switching applications BAL99 3 1 2 Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80

BAL74

Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
Contextual Info: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol

BAW156

Abstract: BCW66
Contextual Info: BAW156. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Common anode configuration BAW156 ! , ,   Type BAW156 Package SOT23 Configuration common anode Marking JZs Maximum Ratings at TA = 25°C, unless otherwise specified

BAL74

Abstract: BAR74 BCW66
Contextual Info: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified

BAV199

Contextual Info: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 ! ,  ,  Type BAV199 Package SOT23 Configuration series Marking JYs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

Contextual Info: BAL99. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL99 !  Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 ! ,  ,  Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

Contextual Info: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

BAS116

Abstract: BCW66
Contextual Info: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 !  Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage