MARKING SS100 Search Results

Contextual Info: SPECIFICATION FOR APPROVAL REF. : PROD. NAME SS1005□□□□L□-□□□ ABC'S DWG NO. Shielded SMD Power Inductor REV. 20131004-E PAGE 1 A 101 Ⅰ﹒Configuration and dimensions： Marking Inductance Code C B F D H D G E I I PCB Pattern Unit：m/m

Contextual Info: SPECIFICATION FOR APPROVAL REF. : PROD. NAME SS1003□□□□L□-□□□ ABC'S DWG NO. Shielded SMD Power Inductor REV. 20140214-C PAGE 1 A Ⅰ﹒Configuration and dimensions： Marking Inductance code C B F D E H D G I I PCB Pattern Unit：m/m A

Contextual Info: SPECIFICATION FOR APPROVAL REF. : SS1004□□□□L□-□□□ ABC'S DWG NO. PROD. Shielded SMD Power Inductor NAME REV. 20131004-B PAGE 1 A B Marking 100 Ⅰ﹒Configuration and dimensions： D F E C PCB Pattern Unit：m/m A 9.90±0.3 B C D E F 4.50±0.3

Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20120323-C PROD. NAME SHIELDED SMD POWER INDUCTOR ABC'S DWG NO. SS1005□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance Code C B F D H D m/m m/m

cm 8600 c smd

Abstract: SS1005 SS1005330YL
Contextual Info: SPECIFICATION FOR APPROVAL REF : 20091110-B PROD. NAME PAGE: 1 ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1005□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance Code C B F m/m m/m m/m m/m

Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20090626-A PROD. NAME ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1003□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance code C B F m/m m/m m/m m/m

ss1003

Abstract: jung shing wire E4008 SS1003220M mtl d 94v-0 m 94v-0
Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20090626-A PROD. NAME ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1003□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance code C B F D E H D m/m m/m

SS1004

Abstract: SMD MARKING CODE 102 SMD MARKING 104
Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : PROD. NAME ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1004□□□□L□-□□□ ABC'S ITEM NO. A A : 9.9±0.3 m/m B : 4.5±0.3 m/m C : 2.9 typ. m/m D : 10.0 ref. m/m E : 10.0 ref. m/m F : 2.8 ref. m/m B Marking

Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : PROD. NAME SHIELDED SMD POWER INDUCTOR ABC'S DWG NO. SS1004□□□□L□-□□□ ABC'S ITEM NO. A A : 9.9±0.3 m/m B : 4.5±0.3 m/m C : 2.9 typ. m/m D : 10.0 ref. m/m E : 10.0 ref. m/m F : 2.8 ref. m/m B Marking

ss129

Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
Contextual Info: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3

marking DF

Abstract: ECSP1608-4 N3004 SS1003EJ
Contextual Info: SS1003EJ Ordering number : ENN8157 SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).

SS100

Abstract: IR SS100 SS15-SS16 SS12 MICROSEMI SS13 SS14 SS15 SS16 SS18
Contextual Info: SS12 thru SS100 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • • • 1 Amp Schottky Rectifier 20 - 100 Volts Schottky Barrier Rectifier Guard Ring Protection Low Forward Voltage Reverse Energy Tested

ss20 SOD-123F marking

Abstract: SS20 SS80 RECTRON MARKING CODE FOR 2010
Contextual Info: SS20L THRU SS100L SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage drop High current capability High speed switching High surge capabitity

Contextual Info: SS10015M Ordering number : ENN7979 Schottky Barrier Diode SS10015M 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.32V) (IF=0.5A, VF max=0.35V).

SS1003M3

Contextual Info: SS1003M3 Ordering number : EN8372A SANYO Semiconductors DATA SHEET SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=1.0A, VF max=0.43V).

SS1003M3

Contextual Info: SS1003M3 Ordering number : ENN8372 SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=0.35mA, VF max=0.43V).

"Marking SC"

Abstract: SS1003M
Contextual Info: SS1003M Ordering number : ENN8347 SS1003M Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small Switching noise. Low forward voltage(IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).

Contextual Info: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)

86886

Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
Contextual Info: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)

MCH3339

Abstract: MCH5823 SS10015M
Contextual Info: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)

ss1001

Abstract: MCH3445 MCH5812 SS10015M
Contextual Info: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)

D1004

Abstract: MCH3405 MCH5811 SS10015M
Contextual Info: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)

MCH3307

Abstract: MCH5836 SS10015M
Contextual Info: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)

SS1001

Abstract: MCH5837 mosfet yb SS10015M TA72
Contextual Info: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M