MARKING S132 Search Results

marking BSs sot-23

Abstract: Q67000-S132 E6327 marking BSs SOT23 MARKING SBs
Contextual Info: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information

Contextual Info: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking

SOT23 MARKING SBs

Abstract: VPS05557 marking SBs BSS145 SD marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 145 SIPMOS Small-Signal Transistor h • N channel j\/\ • Enhancement mode 2 • ^GSith = 14 •••2-3 v 1 Pin 1 Pin 2 G Type Vos b BSS 145 65 V 0.22 A Type BSS 145 Ordering Code Q67000-S132 ffDS on) 3.5 n VPS05557 Pin 3 S Package Marking

E6327

Abstract: Q67000-S132 0051A marking BSs
Contextual Info: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information

TZP27B

Abstract: TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139
Contextual Info: Part Marking <Switching D io d e s <Rectifier D io d e s) DO-35 GSD) DO-34<MSO) u§p Part No. M arking Part No. M arking P art No. M arking P art No. White 1S S130 White 1S2471 Black 1SS131 Black 1 S S 252 Black 1S 2472 Green 1S S132 Green 1S S253 Green 1S 24 73

Contextual Info: PRELIMINARY M IC R O N I 1 MEG ¿R.IlCONDlA'IUH NO SRAM MODULE MT8LS132 X 32 SRAM MODULE 1 MEG X 32 SRAM 3.3VWITHOUTPUT ENABLE • • • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access -15 -20 -25 -35 • Packages 72-pin SIMM

Contextual Info: 131.8MHz SAW Filter 4.4MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. S13202 Part Number: LB LBS13202 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation �

Burr Brown part marking

Abstract: low noise 650nm laser diode ld 650NM photodiode photodiode amplifier 25CC OPT201 OPT201KP QPT201 REGULATOR IC 377 PLASTIC PACKAGE Burr-Brown IC appendix c
Contextual Info: Or, Call Customer S e m e al 1-8O0-548-S132 {USA Only INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 Inch 2.29 x 2.29mm) • 1M£i FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.45A/W ($50nm) The OPT201 is an opto-electronic integrated circuit

Contextual Info: SiP32101 www.vishay.com Vishay Siliconix 6.5 m, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 bidirectional switch features reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 m typ at 3.3 V on-resistance

Contextual Info: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ

Contextual Info: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ

Contextual Info: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ

Contextual Info: SiP32101 www.vishay.com Vishay Siliconix 6.5 m, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 bidirectional switch features reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 m typ at 3.3 V on-resistance

Contextual Info: SiP32101, SiP32102, SiP32103 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101, SiP32102, and SiP32103 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low

Contextual Info: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK®

Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

tokin d-03c

Abstract: M-521CT SBS9080-509T M-542CT SSB050 ST-110BH D-03C1 SS11V-R M-522CT SBT-0260
Contextual Info: 03 Contents Classtification of NEC TOKIN's EMI Suppression parts.･･････3 DIP type Commom Mode Power Line SH Series ･････････････････････････････････････････････8

Contextual Info: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK®

Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

Contextual Info: SiA936EDJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) 0.034 at VGS = 4.5 V 4.5a 0.037 at VGS = 3.7 V 4.5a 0.045 at VGS = 2.5 V 4.5a • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® SC-70 package

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch