SI5446DU Search Results
SI5446DU Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI5446DU-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 25A CHIPFET | Original | 175.7KB |
SI5446DU Price and Stock
Vishay Siliconix SI5446DU-T1-GE3MOSFET N-CH 30V 25A PPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5446DU-T1-GE3 | Reel | 6,000 |
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Vishay Intertechnologies SI5446DU-T1-GE3MOSFET N-Channel 30V 25A 9-Pin PowerPAK T/R - Tape and Reel (Alt: SI5446DU-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5446DU-T1-GE3 | Reel | 6,000 |
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Get Quote | ||||||
SI5446DU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® |
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Si5446DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® |
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Si5446DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si542Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint |
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Si5936DU Si5944DU Si5999EDU Si5997DU Si5517DU VMN-PT0102-1402 Si542 | |
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Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications: |
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SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |