SQ2318AES Search Results
SQ2318AES Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQ2318AES-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 40V SOT23 | Original | 280.05KB |
SQ2318AES Price and Stock
Vishay Siliconix SQ2318AES-T1_GE3MOSFET N-CH 40V 8A SOT23-3 |
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SQ2318AES-T1_GE3 | Reel |
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SQ2318AES-T1_GE3 | 6,000 | 1 |
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SQ2318AES-T1_GE3 | 170,974 |
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Vishay Siliconix SQ2318AES-T1_BE3MOSFET N-CH 40V 8A SOT23-3 |
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SQ2318AES-T1_BE3 | Digi-Reel | 1 |
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Vishay Intertechnologies SQ2318AES-T1_BE3Transistor MOSFET N-Channel 100V 1.6A Automotive 3-Pin SOT-23 - Tape and Reel (Alt: SQ2318AES-T1_BE3) |
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SQ2318AES-T1_BE3 | Reel | 6,000 | 3,000 |
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SQ2318AES-T1_BE3 | 243,890 |
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SQ2318AES-T1_BE3 | 87,383 | 343 |
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SQ2318AES-T1_BE3 | 15,000 |
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SQ2318AES-T1_BE3 | 153,240 |
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SQ2318AES-T1_BE3 | 21 Weeks | 3,000 |
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SQ2318AES-T1_BE3 | 89,967 |
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Vishay Intertechnologies SQ2318AES-T1-GE3Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SQ2318AES-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2318AES-T1-GE3 | Reel | 3,000 |
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SQ2318AES-T1-GE3 | Reel | 267,000 | 3,000 |
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SQ2318AES-T1-GE3 | 4,250 |
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Vishay Intertechnologies SQ2318AES-T1_GE3Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 96Y9637) |
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SQ2318AES-T1_GE3 | Ammo Pack | 1 |
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SQ2318AES-T1_GE3 |
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SQ2318AES-T1_GE3 | 500 |
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SQ2318AES-T1_GE3 | 400 |
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SQ2318AES-T1_GE3 | 2 | 1 |
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SQ2318AES-T1_GE3 | 42,300 |
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SQ2318AES-T1_GE3 | 17 Weeks | 3,000 |
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SQ2318AES-T1_GE3 | 150,710 |
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SQ2318AES-T1_GE3 | 111,890 |
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SQ2318AES-T1_GE3 | 21,000 | 1 |
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SQ2318AES Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
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SQ2318AES AEC-Q101 OT-23 O-236) SQ2318AES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SQ2318AES_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQ2318AES AN609, 6793u 2708u 0865m 6101m 0786m 3038m 9949m 02-Jun-14 | |
Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
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SQ2318AES AEC-Q101 OT-23 O-236) SQ2318AES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SPICE Device Model SQ2318AES www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SQ2318AES 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SQJ469ep
Abstract: SQ4483BE
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AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 |