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    SQ2318AES Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SQ2318AES-T1_GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 40V SOT23 Original PDF 280.05KB
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    SQ2318AES Price and Stock

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    Vishay Intertechnologies SQ2318AES-T1_BE3

    Pwr Mosfet, N Channel, 40V, 8A; |Vishay SQ2318AES-T1_BE3
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    Newark () SQ2318AES-T1_BE3 Cut Tape 47,688 1
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    Bristol Electronics SQ2318AES-T1_BE3 3,000 1
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    Quest Components () SQ2318AES-T1_BE3 2,400
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    Vishay Intertechnologies SQ2318AES-T1_GE3

    Mosfet, Auto, N-Ch, 60V, 2.3A, Sot-23; |Vishay SQ2318AES-T1_GE3
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    Vishay Intertechnologies SQ2318AES-T1-GE3

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    Vishay Siliconix SQ2318AES-T1_GE3

    MOSFET N-CH 40V 8A SOT23-3
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    Vishay Huntington SQ2318AES-T1-GE3

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    SQ2318AES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


    Original     		sq2318aesaec-q101ot-23o-236+4sq2318aes-t1-ge32002/95/ec2011/65/eujs709a PDF

    Contextual Info: SQ2318AES_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		sq2318aesan6096793u2708u+60865m6101m0786m3038m9949m02-jun-14 PDF

    Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


    Original     		sq2318aesaec-q101ot-23o-236+4sq2318aes-t1-ge32002/95/ec2011/65/eujs709a PDF

    Contextual Info: SPICE Device Model SQ2318AES www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		sq2318aes2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    SQJ469ep

    Abstract: SQ4483BE
    Contextual Info: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of


    Original     		aec-q101ts-16949vmn-ms6925-1406sqj469ep+1sq4483be PDF

    sq4435

    Abstract: SQP120N10-09
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.


    Original     		vmn-pl0469-1505sq4435sqp120n10-09 PDF

    VMN-SG2151-1406

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param


    Original     		aec-q101vmn-sg2151-1406 PDF