MARKING RA0 Search Results

Z750

Abstract: D73ZOV251 D73ZOV300RA02 RA03 z950 d73zov250ra02 D73ZOV600RA02 z151 03
Contextual Info: D 7 S 3 M a x i m u m Part Number Actual Part Marking Continuous Rated Voltage AC RMS DC Volts Volts 7mm D isc D iam eter D73ZOV110RA01 D73ZOV140RA01 Z110-01 Z140-01 11 14 D73ZOV170RA01 D73ZOV200RA01 D73ZOV250RA02 Z170-01 Z200-01 Z250-02 D73ZOV300RA02 D73ZOV350RA02

MT47H128M8CF-25

Abstract: 8 resistor array 10k smd 103
Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Z400-12

Abstract: Z581-120 D69ZOV301 VARISTOR 595 -PH Z301-80 D6921ZOV151RD09 4500 Z600-06 Z151 Z681-150
Contextual Info: D 6 S 9 M a Part Number Actual Part Marking X i m u m Continuous Rated Voltaae AC RMS DC Volts Volts E R a t i n a R s Rated Slnale Pulse Transient Energy Peak 2ms 10/1000|as 8/20|is Joules Joules Amps I Electrical Varistor Voltage @1mA DC Min Max Volts Volts

Theta JC of FBGA

Abstract: 256MbDDR2
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

BT 742

Abstract: DDR2 2gb x16 industrial DDR2 x16 vm 256MB DDR 400 MT47H DDR2 SDRAM Meg x 16 x 16 banks led MR11 MT47H16M16 DDR2-400 DDR2-533
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • Marking • Configuration

mt47h32m8bp-3

Abstract: TN-001
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

256Mb

Abstract: DDR2-400 DDR2-533 DDR2-667 MT47H16M16 MT47H32M8 MT47H32M8BP-3
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

u68a equivalent

Abstract: MT47H128M8HQ-3
Contextual Info: 1Gb: x4, x8, x16 1.55V DDR2 SDRAM Features DDR2 SDRAM MT47R256M4 – 32 Meg x 4 x 8 banks MT47R128M8 – 16 Meg x 8 x 8 banks MT47R64M16 – 8 Meg x 16 x 8 banks Options1 • • • • • • • • • • • • • • • • • • • Marking • Configuration

Z301-10

Abstract: D58ZOV271RA09 D58ZO VARISTOR 58819 z950 Z350-01 z301 150vac Z151-02 Z271-09 z30001
Contextual Info: 5 8 E s a X i m u m Part Number 5m m D isc D iam eter D58ZOV110R AOO D58ZOV140R A00 Actual Part Marking Continuous Rated Voitape AC RMS DC Volts Volts R I R a t i n n s E Ie ct r i c a I Rated Sinale Pulse Transient E nergy Peak 2ms 10/1000|js 8/20fiS Joules

Cyntec resistor

Abstract: RR0510
Contextual Info: DOCUMENT : RA000000 CYNTEC CO., LTD. REVISION : B0





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PAGE 0402 Series Thin Film Chip Resistor 1. Scope This specification applies to 0.5mm x 1.0mm 0402 size, fixed metal chip resistors rectangular type for use in electronic equipment.

RR0510

Contextual Info: CYNTEC CO., LTD. 乾坤科技股份有限公司 DOCUMENT : RA000000N REVISION : A1 PAGE : 1 OF 9 0402 Series Thin Film Chip Resistor 1. Scope This specification applies to 0.5mm x 1.0mm 0402 size, fixed metal chip resistors rectangular type for use in electronic equipment.

RR0510

Contextual Info: CYNTEC CO., LTD. 乾坤科技股份有限公司 DOCUMENT : RA000000N REVISION : A2 PAGE : 1 OF 9 0402 Series Thin Film Chip Resistor 1. Scope This specification applies to 0.5mm x 1.0mm 0402 size, fixed metal chip resistors rectangular type for use in electronic equipment.

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

DB35T

Abstract: mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

mitsubishi marking lot number

Abstract: 350-400MHZ RF MOSFET MODULE RA03M3540MD RA03M3540MD-101 Mitsubishi transistor rf final
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M3540MD RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M3540MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

RF MOSFET MODULE

Abstract: RA03M4043MD RA03M4043MD-101 RF MODULE CIRCUIT DIAGRAM MITSUBISHI LOT NO. CODE
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4043MD RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4043MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

RA03M4547MD

Abstract: RA03M4547MD-101 RF MOSFET MODULE
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4547MD RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

RF MOSFET MODULE

Abstract: MOSFET Amplifier Module H46S
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

transistor marking code H11S

Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.