MARKING M2 NPN Search Results

marking code M2 SOT23

Abstract: marking M2 k1R transistor
Contextual Info: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications SOT-23 Dim A Min Max 0.37 0.51 B 1.19 1.40 C 2.10

BC817

Abstract: BC817-16LT1 BC817-25LT1 BC817-40LT1
Contextual Info: General Purpose Transistors NPN Silicon BC817-16LT1 BC817-25LT1 BC817-40LT1 3 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 45 V 2 Collector–Base Voltage V CBO 50 V Emitter–Base Voltage V EBO

BC817LT1

Abstract: BC817 BC817-16LT1 BC817-25LT1 BC817-40LT1 marking M2 NPN
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BC817-16LT1 BC817-25LT1 BC817-40LT1 3 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage V CBO 50 V Emitter–Base Voltage

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

TRANSISTOR SMD CODE PACKAGE SOT89

Abstract: PHILIPS MOSFET MARKING SC-62 SOT89 SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 3x K TRANSISTOR SMD MARKING CODE SMD MARKING CODE transistor SMD TRANSISTOR 2005
Contextual Info: 2PD2150 20 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 22 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424.

2SC5066F

Contextual Info: TOSHIBA TENTATIVE 2SC5066F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF —l.ldB , |S2lel2= 12dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: Ordering number : ENA0411A 2SC6095 Bipolar Transistor 80V, 2.5A, Low VCE sat , NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage

Contextual Info: 2SC6095 Ordering number : ENA0411 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process.

2SC6095

Abstract: VR10 ENA0411 A0411
Contextual Info: 2SC6095 Ordering number : ENA0411 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process.

Contextual Info: TOSHIBA TENTATIVE 2SC5066F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2le|2= 12dB f=lGHz 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

s21c

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R \ 2 S Q 5 FOR VCO APPLICATION Q 7 U nit in mm 2 1±0 1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation

KSC2982

Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

Contextual Info: 2SC6095 Ordering number : ENA0411A SANYO Semiconductors DATA SHEET 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process

Contextual Info: 2SC6095 Ordering number : ENA0411A SANYO Semiconductors DATA SHEET 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process

Contextual Info: STLDC08 Step-up controller for LED supply Features • Input voltage range from 0.8 V to 3.6 V ■ Overvoltage protection ■ Drives N-channel MOSFET or NPN bipolar transistor ■ No control loop compensation required ■ FET driver for very precise PWM dimming

GRM31CB31C106K

Abstract: STLDC08 DFN10 GRM188R61C105K STPS2L30 STS5DNF20V i510ma C3M11
Contextual Info: STLDC08 Step-up controller for LED supply Features • Input voltage range from 0.8 V to 3.6 V ■ Overvoltage protection ■ Drives N-channel MOSFET or NPN bipolar transistor ■ No control loop compensation required ■ FET driver for very precise PWM dimming

MARKING CODE B3 sot-89

Abstract: MY sot-89 NPN medium power transistor in a SOT package
Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

2SC5066

Abstract: 2SC5066FT
Contextual Info: TO SH IBA 2SC5066FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066FT VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 i e l 2 = 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

CPH5901

Contextual Info: Ordering number : EN8278B CPH5901 N-Channel JFET and NPN Bipolar Transistor 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly

Contextual Info: T O SH IB A 2SC5066FT TOSHIBA TRANSISTOR K f SILICON NPN EPITAXIAL PLANAR TYPE RilfifiFT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF = l.ld B , |S2 ie l2 = 12dB U n it in mm 1.2 ± 0 .0 5 f= lG H z 0.8 ± 0.05

Contextual Info: Ordering number : EN6962C CPH5902 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly

marking 1a

Abstract: CPH5901 2SC4639 2SK932 82786
Contextual Info: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

CPH5902

Abstract: ITR10364 ITR10365 2sk2394-equivalent ITR10367
Contextual Info: CPH5902 Ordering number : ENN6962B CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting