MARKING F3 SOT23 Search Results

KDS193

Abstract: marking F3 sot23
Contextual Info: SEMICONDUCTOR KDS193 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 F3 1 2 Item Marking Description Device Mark F3 KDS193 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time 1 MARKING: F3 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit VRM 85 V

1SS193

Contextual Info: 1SS193 Switching Diodes SOT-23 1. ANODE 2. N.C. 3. CATHODE Features — — Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: F3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits

f3 diode sot23

Abstract: marking code F3 diode MARKING F3 marking f3 sot-23
Contextual Info: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM

marking code F3

Abstract: diode MARKING F3
Contextual Info: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)

ISS193

Abstract: ISS193 F3 marking f3 sot-23 1SS193
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS193 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. ANODE MARKING: F3 2. N.C. 3. CATHODE Maximum Ratings @TA=25℃

KSC3488

Abstract: KSC853 KSA953 KSC815
Contextual Info: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )

KSC815

Contextual Info: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN

F5 MARK

Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3
Contextual Info: KST1009F1/F2/F3/F4/F5 KST1009F1/F2/F3/F4/F5 AM/FM RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available

Contextual Info: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available

2N2894AC1

Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23
Contextual Info: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available

MMSZ5243

Abstract: N4 SOT23
Contextual Info: 500mW ZENER DIODES MMSZ52 SERIES • New Product SOT23 Pkg. TA = 25˚C The latest comprehensive data to fully support these parts is readily available. TAPE & REEL SPECIFICATIONS SOT23 Tape Width Reel Diameter Quantity 8mm 178mm 3,000 8mm 330mm 10,000 Nom.

BFR92A

Abstract: bfr92
Contextual Info: SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Suitable For UHF Applications Up To 1.0GHz • Space Level and High-Reliability Screening Options Available

Contextual Info: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available

Contextual Info: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available

CV 203

Abstract: marking code C9 F3 SOT23-3
Contextual Info: KV1430 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 3.70 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

BS850

Abstract: BSS84 DS11402 SOT23 marking GF
Contextual Info: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited for Automatic Assembly DISCONTINUED,

Contextual Info: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR DISCONTINUED, FOR NEW DESIGN USE BSS84 Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

marking F3 sot-23

Abstract: Marking f3 diode MARKING F3 1SS193 SMD marking F3
Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS193 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)

Contextual Info: Product specification 1SS193 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) +0.05