MARKING CODE NA SOT23 Search Results

SOT-23 IP

Abstract: marking code P28 SOT 23 Programmable Unijunction Transistor CMPP6027 CMPP6027 CMPP6028 Programmable unijunction CMPP6028 unijunction
Contextual Info: Central CMPP6027 CMPP6028 SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT23 package, designed for adjustable programmable

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

BC817

Contextual Info: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound

TRANSISTOR S1d

Abstract: BCW66 SMBTA92
Contextual Info: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

K2F transistor

Abstract: pnp k2f K2F DIODES K2F 9 K2F single Application of MMBT2907A K2F marking
Contextual Info: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching

BC848A

Contextual Info: BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary PNP Types: BC856 – BC858   For switching and AF Amplifier Applications Case: SOT23 Case material: molded plastic, “Green” molding compound

MOSFET TRANSISTOR SMD MARKING CODE nh

Contextual Info: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

transistor smd code marking 420

Contextual Info: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

TRANSISTOR SMD MARKING CODE 1 KW

Contextual Info: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

K2t transistor

Abstract: mmbt4403
Contextual Info: MMBT4403 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT4401 Ideal for Medium Power Amplification and Switching

K2X pnp

Abstract: MMBT4401_Q MMBT4401Q-13-F D marking PNP K2X SOT23
Contextual Info: MMBT4401 40V NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching

BAW156

Abstract: BCW66
Contextual Info: BAW156. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Common anode configuration BAW156 ! , ,   Type BAW156 Package SOT23 Configuration common anode Marking JZs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: Product specification Philips Semiconductors BB901 Variable capacitance diode DESCRIPTION The BB901 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended as a tunable coupling diode in VHF all-band tuners. QUICK REFERENCE DATA

smd code marking ft sot23

Abstract: marking code my SMD Transistor npn marking code SG transistors SMD MARKING CODE sg smd code marking sot23 nxp MARKING SG marking code NA sot23 MARKING CODE SMD IC MARKING sg SOT23 MARKING SOT23 .DG
Contextual Info: 2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 — 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bb53T31 0QEb447 TET H A P X Product specification Philips Semiconductors_ BBY40 Variable capacitance diode DESCRIPTION The BBY40 is a variable capacitance diode in a plastic SOT23 envelope. It is intended for electronic tuning in VHF television

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs