MARKING CODE 62A Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

BCV62

Contextual Info: BCV 62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage C2 1 C1 (2) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Ordering Code

Contextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

Contextual Info: PD - 95363 IRF3708PbF IRF3708SPbF IRF3708LPbF SMPS MOSFET Applications l l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for

irgp4063d1

Abstract: IRGP4063D IRGP4063
Contextual Info: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive

IGBT gate driver welding

Abstract: IRGP4063D
Contextual Info: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive

marking 31A

Abstract: AN-994 IRF3708 IRF3708L IRF3708S 4.5v to 100v input regulator
Contextual Info: PD - 93938A IRF3708 IRF3708S IRF3708L SMPS MOSFET Applications l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for

AN-994

Abstract: IRF3708 IRF3708L IRF3708S ED marking code diode 4.5v to 100v input regulator
Contextual Info: PD - 93938B IRF3708 IRF3708S IRF3708L SMPS MOSFET Applications l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for

Contextual Info: PD - 93938B IRF3708 IRF3708S IRF3708L SMPS MOSFET Applications l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for

AN-994

Abstract: IRF3708 IRF3708L IRF3708S 4.5v to 100v input regulator
Contextual Info: PD - 93938B IRF3708 IRF3708S IRF3708L SMPS MOSFET Applications l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for

Contextual Info: Advanced Power Electronics Corp. AP0704GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D SO-8 Compatible with Heatsink Low On-resistance G RoHS-compliant, halogen-free BV DSS 40V R DS ON 7mΩ ID 62A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with

T0247AC

Contextual Info: kitemational PD 9.1409 SRectifier IRFP048N PRELIMINARY HEXFET Power M OSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = 0.016Î2 lD = 62A Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier

TO247AC

Abstract: IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302
Contextual Info: PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A S Description Fifth Generation HEXFETs from International Rectifier