MARKING CODE 52 DIODE Search Results

diode 447

Abstract: 446 DIODE 448 diode BBY 52-03W
Contextual Info: SIEMENS BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52-03W 1 white Q62702-B664 1=C

Contextual Info: SIEMENS BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 52-03W Marking Ordering Code Pin Configuration Package 1 white Q62702-B664

Q62702-B664

Contextual Info: BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code BBY 52-03W I white Q62702-B664 Q62702- Pin Configuration 1=C

Contextual Info: SIEMENS BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s Q62702-B632 1 = A1 Package 2 = A2

Q62702-B599

Abstract: marking code 52 sot23 - 6
Contextual Info: BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s 1 = A1 Q62702-B599 Package 2 = A2 3 = C1/2 SOT-23

15025

Contextual Info: SIEMENS Silicon Schottky Diodes BAT 15-. 5 R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 R 52 Q62702-A804

A235L

Contextual Info: SIEMENS Silicon Schottky Diodes BAT 15-. 5 D • Beam lead technology • Low dimension • High performance • Low barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 D 52 D

Contextual Info: SIEMENS BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation • For V C O ’s in mobile communications equipment Type Marking Ordering Code Pin Configuration

marking code B38

Contextual Info: ERB38 0.8A ( 400 to 600V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : White High reliability Applications Voltage class Lot No. Cathode mark 52

marking code B38

Abstract: ERB38
Contextual Info: ERB38 0.8A ( 400 to 600V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : White High reliability Applications Voltage class Lot No. Cathode mark 52

DIODE T4 marking

Abstract: Q62702-B0860 VES05991
Contextual Info: BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 1 VES05991 Type Marking Ordering Code Pin Configuration

DIODE T4 A1

Abstract: diode marking T4
Contextual Info: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration

Contextual Info: A Product Line of Diodes Incorporated AH49F LINEAR HALL EFFECT IC Description Pin Assignments The AH49F is a small, versatile linear Hall-effect device that is operated by the magnetic field from a permanent magnet or an electromagnet. The output voltage is set by the supply voltage and

ZP33A

Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Contextual Info: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=

Contextual Info: DTA123 YM/YE/YUA/YCA/YSA PNP Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with

transistor package SOT-723

Abstract: dta123
Contextual Info: DTA123 YM/YE/YUA/YCA/YSA PNP Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

ZENER DIODE marking l2

Abstract: zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B
Contextual Info: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.

1N50xx

Abstract: SMD zener marking code 102
Contextual Info: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.

sr5 diode

Contextual Info: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-HF Thru. SR5200-HF Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.

diode sod* marking code 84

Abstract: marking JL sod123 CMHZ5229B cm5 marking CMHZ5265B
Contextual Info: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface

marking BB diodes

Contextual Info: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBB520-HF Thru. CDBB5200-HF Reverse Voltage: 20-200 Volts Forward Current: 5.0 Amp RoHS Device Features -Halogen free. -Batch process design, excellent powe dissipation offers better reverse leakage. current and thermal resistance.

marking 51

Abstract: DS30258 marking 52
Contextual Info: BAS116T, BAW156T, BAV170T, BAV199T SURFACE MOUNT LOW LEAKAGE DIODE NEW PRODUCT Features • · Ultra-Small Surface Mount Package Very Low Leakage Current SOT-523 TOP VIEW Mechanical Data · · · · · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

BAS116T

Abstract: BAS116T-7 BAV170T BAV199T BAW156T J-STD-020A marking 030
Contextual Info: BAS116T, BAW156T, BAV170T, BAV199T SURFACE MOUNT LOW LEAKAGE DIODE NEW PRODUCT Features • · Ultra-Small Surface Mount Package Very Low Leakage Current SOT-523 A · · · · · · Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 C Mechanical Data