MARKING BBW Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BBV marking

Abstract: 2SD2114 bbv 08 BBV transistor marking BBW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

BBV transistor

Abstract: marking BBW marking BBV BBV marking
Contextual Info: 2SD2114 SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) — — MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

sps gf20

Abstract: gf20 connector EWCAP-15 GF20
Contextual Info: TABLE OF CONTENTS SHEET NO. SHEET DESCRIPTION 1 NOTES 2 KEY CONFIGURATIONS 3 BLADE SEALED ASSEMBLY i SYSTEM PACKAGING 5 BOM n u . a ITTI D © Í7TI ITO I BLADE S E A LE D ASSEM BLY OPTIONAL LASER MARKING THIS SURFACE SEE NOTE 3g. & ^ HD a 5 S 1 > KD Ò

marking BBW

Contextual Info: DCR0029A 3.2GHz MHz BBW BPF Rev 0 – Origin Date: November 13, 2006 – Revision Date November 13, 2006 Features • Low Loss • Symmetrical Attenuation • Surface Mount Device Description Silver Ag coated coupled ceramic resonators mounted on PCB. Developed

Contextual Info: Omnimate Range - 3.50 mm Pitch . Socket blocks BLIDC . Socket blocks BLIDCB Socket blocks BLIDC . • • H hB w w b^bB H 8B B B B H H w B W B W W W bbwW W W IiBB w w I Technical data VDE UL CSA Technical data VDE UL CSA Technical data VDE UL CSA Rated voltage V

marking code BBH

Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Contextual Info: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these

bq 8050

Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Contextual Info: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管

bbc 127 324 DIODE

Abstract: 1.0 SMBJ SMBJ130A SMBJ100A SMBJ16CA SMBJ6.5A SMBJ12A SMBJ28A SMBJ40A SMBJ13CA
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C

bbc 127 324 DIODE

Abstract: marking bbz st marking BBM code SMBJ30A DO-214AA 0/bbc 127 324 DIODE SMBJ16CA-TR bbg marking st transil marking BUZ SMBJ40A st marking BBN code
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C

bbc 127 324 DIODE

Abstract: marking code BBW st marking BBM code SMBJ12A BUV 481 marking code BUH SMBJ15 SMBJ6.0A/CA smbj marking code st 718 diode
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ A K

bbc 127 324 DIODE

Abstract: st marking BBM code smbj33ca smbj marking code st 718 diode BUV 481 SMBJ30A DO-214AA SMBJ15 transil diode OCT2001
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C

BUV 481

Abstract: bbg "marking" diode IPC7531 bbg marking st transil marking bbz ST BUN marking BBW smbj12a SMBJ24a SMBJ12A-TR
Contextual Info: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Operating Tj max: 150 °C ■ JEDEC registered package outline A K Unidirectional SMB (JEDEC DO-214AA)

SMBJ5.0A DO214AA

Abstract: marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

FY632

Abstract: FW625
Contextual Info: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18D MT28C128564W18D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices

FY636

Abstract: transistor marking A21 TOP SIDE MARKING OF MICRON FW636 marking E5 MICRON 63
Contextual Info: ADVANCE‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18S MT28C256564W18S Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA • Stacked die Combo package Includes two 128Mb Flash devices

Contextual Info: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices

FW643

Abstract: FX639 FX649 FY631 FY627 w18 SMD smd transistor w18 w18 smd transistor FY651 FW649
Contextual Info: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. hFE = 1200 (Typ.) z High emitter-base voltage. VEBO =12V (Min.) z Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)

BBV marking

Abstract: 2SD2114
Contextual Info: 2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200 Typ High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)

st marking BBM code

Abstract: bbn DIODE SMBJ18A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ16A-TR SMBJ188A-TR SMBJ20A-TR
Contextual Info: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline

BBV transistor

Abstract: 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820
Contextual Info: 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. High Emitter-Base Voltage. VEBO=12V Min. A L 3 3 C B Top View CLASSIFICATION OF hFE

Contextual Info: TPS62040 TPS62042, TPS62043 TPS62044, TPS62046 www.ti.com SLVS463B − JUNE 2003 − REVISED OCTOBER 2005 1.2 A/1.25 MHz, HIGH-EFFICIENCY STEP-DOWN CONVERTER FEATURES D Up to 95% Conversion Efficiency D Typical Quiescent Current: 18 µA D Load Current: 1.2 A

s21c

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R \ 2 S Q 5 FOR VCO APPLICATION Q 7 U nit in mm 2 1±0 1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation