MARKING AX Search Results

Contextual Info: ROV Metal Oxide Varistors Marking and Packaging Specifications for ROV Metal Oxide Varistors Figure V29 - Marking 471K VDE : Raychem Circuit Protection Logo 471 : Varistor Voltage Indicator K : Varistor Voltage Tolerance : Lot Identification Figure V30 - Packaging in Millimeters

vishay Axial DO-204AR

Contextual Info: Part Marking Information www.vishay.com Vishay Semiconductors Axial > 4 A for DO-204AR Part number V XXXXXXX ZYYWWX Z = Environmental digit - none = Lead Pb -free and RoHS compliant - M = Halogen-free, RoHS compliant, and terminations lead (Pb)-free YY = Two digit for the year

erds2t0

Abstract: ERD25 W1001
Contextual Info: Carbon Film Resistors Carbon Film Resistors Type: ERDS1 0.5 W ERDS2 (0.25 W) ERD25 (0.25 W) • Features ● ● ● ● ● Discontinued Reliability . Automatic insertion . Marking . Flame Retardant . Reference Standard .

D1NL40

Abstract: diode D1nl40
Contextual Info: n - n x V 'C X -Y - Super Fast Recovery Diode Axial Diode O UTLINE D IM E N S IO N S D1NL40 Unit •mm Package I AX057 o 400V 0.9A hLO rn ±0.1 20MIN • trr5 0 n s • 5mm \d " j -20min -M - m «EPM f Marking L4 9D

Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 5000UE Multi-Conductor - Commercial Audio Systems - 2 Conductors Cabled For more Information please call 1-800-Belden1 Description: 12 AWG bare copper conductors, PP insulation, PVC jacket with ripcord, sequential footage marking every

bo 947

Abstract: BDP947C dp947
Contextual Info: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B

jedec package MO-269

Abstract: MT41J128M SSTE32882 micron ddr3 2133 MT18JDF25672PDZ-1G4
Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 SDRAM VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) Options Marking • Operating temperature

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

V23234-A1001-X036

Abstract: V23234-A0004-X053 V2323 V23234-A1001-X033 V23234-A1004-X050 V23234-B1001-X004 V23234-C1001-X005 V23234-A0001-X038 5 pin relay 12vdc with NO NC V23234-A0001-X040
Contextual Info: Automotive Relays Plug-in Mini ISO Relays Power Relay B n Pin assignment similar to ISO 7588 part 1 Plug-in terminals n Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color

DIODE FAST S2L

Abstract: DIODE s2l S2L60 S2L DIODE "S2L" DIODE
Contextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S2L60 600V 1-5A CD 26.5±2 • Unit • mm Package I AX10 <¡>4.4-0. 26.5« 7-0 h iîj ïl l d <> •trr50ns -N - •:-tSEPB*[ Marking S2L 07 •P F C / •SRSÍÜ • ^ B s O A ffi'E

"MARKING TE" US6

Abstract: 2301 mini transistor
Contextual Info: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment

equivalent transistor for K630

Abstract: K633 Q62705-K633 TLE4941-2 k630 TLE4941 TLE4942 TLE4942-2 TLE4942-2C TLE4942C
Contextual Info: Data Sheet Supplement Differential Two-Wire Hall Effect Sensor IC TLE4942-2 TLE4942-2C For all parameters not specified in this document the TLE4942 data sheet is valid. P-SSO-2-1 Type Marking Ordering Code Package TLE4942-2 4202E4 Q62705-K633 PSSO2-1 TLE4942-2C

3sm diode

Abstract: 3SM* diode
Contextual Info: Schottky Barrier Diod» Axiaf Diode • W B -tfäsH , O U T L IN E DIM ENSIONS Case : Axial S3S6M 60V 3A 25±2 t 0.5 7 -0 ^0.2 0 4 . 4 - 0 .1 25±2 0— 14— 0 • * } £ E i] iti? 3 E i Marking Color code Blue 3SM 62- r ■ SÊfèf? -o v b tz n m ) Date code

MOS1 Resistor KOA

Abstract: Ceramic Resistor 5W L521 L631 T521
Contextual Info: 1733 Reader's Spreads pg1-203:document 1/27/09 4:10 PM Page 123 PMS 300 neg. Black neg. reduced size metal oxide power type leaded resistor EU features • Coated with UL94V0 equivalent flameproof material • Suitable for automatic machine insertion • Marking: Pink body color with color-coded bands

AE001

Abstract: diagram 94v-0 EME-1200 CC4532 G-170
Contextual Info: SPECIFICATION FOR APPROVAL REF : PAGE: 1 PROD. NAME CC4532□□□□L□ ABC'S DWG NO. WOUND CHIP INDUCTOR ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： 330K Marking Inductance code : 4.5±0.3 m/m B : 3.2±0.2 m/m C : 3.2±0.2 m/m E : 1.2 m/m F : 1.0

ss98 transistor

Abstract: transistor marking code wgs
Contextual Info: SIEMENS BSS 98 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type BSS 98 Vds 50 V Type BSS 98 BSS 98 BSS 98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 b 0.3 A %S(on) 3.5 £2 Package Marking

s2v60 DIODE

Contextual Info: - t m & V 'f t - h* 7 ÍÍ/1 » tf-F Axial Diode Rectifier Diode • *W fN -ä s H O U T L IN E D IM E N S IO N S Package : AX10 S2VD 7 + 0.5 26.5*2 26.5*2 *-0 60 0 V 1 .7A -e + •ra B J ï * S H S ifflflB I •B Ä ttic ffin s flis tt •s n m fts Marking

Contextual Info: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code

Contextual Info: SC802-04 1.0 A L : O utline Drawings S sa 'y b ^ — ' V J T ? ' - f ¿ t — SCHOTTKY BARRIER DIO DE : Features Surface mount device • “I&Vf Low V f :tk : Marking Super high speed switching. • 7V — m± High reliability by planer design. • E l i ! : A pplications

DIODE S3V

Abstract: DIODE S3V 40 DIODE S3V 63 S3V Diode DIODE S3V 7
Contextual Info: r c r — K A x ia l D lo d * Sinote DfecUp ^MytäsOB Avatanche ty « ^ O U T L IN E DIM ENSIONS Cathode Anode S3VDZ 04 .8 M A X 600V 3.5A Color code, Cathode band Blue : S3V60Z Marking 7'<7'svi.& zm S3V 63 ¡.fe Type No. • f-X x Avalanche type (Silver

Contextual Info: BAT54HT1G Schottky Barrier Diodes Connection Diagram 1 1 A2 2 SOD-323 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum Ratings 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

ERA38

Abstract: irsy
Contextual Info: E R A 38 o.5A Outline Drawings FAST RECOVERY DIODE : Features • iti-a u : Marking S u p e r high speed sw itch in g • f f i ' J 5 m m l i 7 f £ » « ¡A U ltra sm all p a c k a g e . * 7 —□ — K : Ö C o lo r code : W hite Possible fo r 5 m m pitch a u to m a tic insertion

smd marking 35

Abstract: 1SS378 smd diode UM smd diode marking um smd diode UM 85
Contextual Info: Diodes SMD Type HIGH SWITCHING DIODE 1SS378 Features Low forward voltage:VF 3 = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current

1SS393

Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF 3 = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 45 V R everse voltage