MARKING AIH Search Results

MPSA92

Abstract: MPSA MPSA 135 mpsa 92 Q68000-A4810 Q68000-A5906 MPSA93 marking code 93
Contextual Info: MPSA 92 MPSA 93 PNP Silicon High-Voltage Transistors ● ● ● High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 42 MPSA 43 NPN 1 32 Type MPSA 92 MPSA 93 Marking MPSA 92 MPSA 93 Ordering Code Pin Configuration Q68000-A5906

mpsa42

Abstract: MPSA 135 mpsa43 mpsa mpsa 42 Q68000-A4809 Q68000-A413
Contextual Info: MPSA 42 MPSA 43 NPN Silicon High-Voltage Transistors ● ● ● High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 92 MPSA 93 PNP 1 32 Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configuration Q68000-A413

g554

Abstract: 93 MARKING CODE
Contextual Info: REV. S tatus REVISION 0 5 /0 4 /9 3 TS REVISION A CLARIFIED MARKING 0 6 /2 9 /0 5 YS A. Electrical specification @ 2 5 °C 1. Power rating; 500 mW 2. Dielectric strength; 500 VDC 1 minute 3. Insulation resistance; 10.000 MQ MIN @ 500 VDC 4. Turns ratio;

Contextual Info: REV. S ta tu s REVISION 0 8 / 1 4 / 9 2 TS REVISION A FLIPPED RADII & CLARIFIED MARKING 0 6 / 2 9 / 0 5 YS A. Electrical specification @ 2 5 °C cr Ld m 1. 500 mW 2. 500 VDC 1 minute 3. 10,000 MQ MIN 500 VDC CO in in 4. (1 - 5 ) : (6 - 2 ) = 1 : 2 CT ±5%

rsmf3b

Abstract: 100K0 E611 rsf-11 rs-ff RSMF12B RSF2B RSF1B
Contextual Info: D im c - n s iu n s m B Type d □ c r _ i_ t D ; R S F ^ - f y / 7 j b - ? \ s - ,RSMFZ ' C J l ' f ' J - y ü tiz 7—1]— K ÄF : Coating Color : RSF type/B luegray ,RSMF type/G reen Marking : Color code \f L R S F 12B 9±1 3 ± 0 .5 0 .7 28±2 RSF1B 1 1 ±1

Contextual Info: nick icon ALUMINUM ELECTROLYTIC CAPACITORS Standard, For General Purposes - Axial Lead Type 02 type series AiHi-Sdvait Feature fltraigh 100Vonly) • Axial lead type of standard series for general purposes. •Specifications [ Item Performance Characteristics

AISHI Capacitor

Abstract: CD11G
Contextual Info: 湖南艾华集团股份有限公司 HUNAN AIHUA GROUP CO., LTD Tel: 0737 6184466 Fax : (0737)6180493 Http://www.aihuaglobal.com Customer:四川虹锐 Date:April 11, 2013 SPECIFICATION Description: Aluminum Electrolytic Capacitors AISHI P/N: EGW2WM3R3F12OT

Contextual Info: AME, Inc. AME8803 / 8814 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8803/8814 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.

Contextual Info: AME, Inc. AME8803 / 8814 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8803/8814 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.

AME8803

Abstract: Linear Regulator sot-26 SOT26 TSOT-26 AME8803AEEY AME8803BEEY AME8814 8814 TRANSISTOR 8814
Contextual Info: AME 300mA CMOS LDO AME8803 / 8814 n General Description n Functional Block Diagram The AME8803/8814 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-26 package is attractive for "Pocket"

F6 DD52

Abstract: dd52 ll87 mini circuits mcl-1 LA 4288
Contextual Info: cuse s y es outline dim sni ions m m c D H J K 1 grams. NOTES* A 01 .770 19.56 .800 20.32 .385 9.78 .400 0.16 Ç 10 .400 10 16 .200 5.08 .20 5.08 .14 3.56 .031 .79 5.2 A1,B3,E1,B7 .480 12.19 .500 12.70 .390 9.91 .405 0.29 .5 0 5 '3 .230 5.84 .100 2.54

gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Contextual Info: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and

transistor marking L ghz

Abstract: mmic marking L
Contextual Info: Infineon ►a c h r t o l u g i a » 24 - 28 GHz GaAs Doubler MMIC 24 - 28 GHz Doubler Preliminary Data Sheet • • • • • Monolithic Microwave Integrated Circuit MMIC Frequency Doubler (coplanar design) Input/Output matched to SO i2 Input frequency range: 12 GHz to 14 GHz

HEMT Amplifier

Abstract: LNA marking G
Contextual Info: In fineon !*íh«t!eg¡íis 24 - 32 GHz GaAs Low Noise Amplifier MMIC 24 - 32 GHz LNA Preliminary Data Sheet • Two-Stage Monolithic Microwave integrated Circuit MMIC HEMT Amplifier (coplanar design) • Input/Output matched to 50 • Frequency range: 24 GHz to 32 GHz

G550

Abstract: COUNTRY OF ORIGIN P-A1-10638
Contextual Info: REV. S ta tu s R E V IS IO N 0 5 /0 3 /9 3 TS R E V IS IO N A C L A R IF IE D M A R K IN G 0 6 /2 7 /0 5 PREPARED YS A. Electrical s p e cifica tio n @ 2 5 °C 1. Power rating; 5 0 0 mW 2. D ielectric stre ng th; 5 0 0 VDC 1 m inute 3. Insulation resistance;

Contextual Info: TPS62000, TPS62001, TPS62003 TPS62004, TPS62005, TPS62006 TPS62007, TPS62008 www.ti.com . SLVS294E – SEPTEMBER 2000 – REVISED AUGUST 2008

Contextual Info: TPS62000, TPS62001, TPS62003 TPS62004, TPS62005, TPS62006 TPS62007, TPS62008 www.ti.com . SLVS294E – SEPTEMBER 2000 – REVISED AUGUST 2008

Contextual Info: TPS62000, TPS62001, TPS62003 TPS62004, TPS62005, TPS62006 TPS62007, TPS62008 www.ti.com . SLVS294E – SEPTEMBER 2000 – REVISED AUGUST 2008

8814

Abstract: TRANSISTOR 8814 AME8803 AME8803AEEY AME8803BEEY AME8803CEEY AME8803DEEY AME8803EEEY AME8803FEEY AME8803GEEY
Contextual Info: Analog Microelectronics, Inc. AME8803/8814 300mA CMOS LDO n General Description n Features The AME8803 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The

TRANSISTOR 8814

Abstract: 8814 AME8803DEEY AATW E1B12 AME8803 AME8803AEEY AME8803BEEY AME8803CEEY AME8803EEEY
Contextual Info: AME, Inc. 300mA CMOS LDO AME8803 / 8814 n General Description n Functional Block Diagram The AME8803/8814 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.

BBREF0425

Contextual Info: 5 1993 B U R R -B R O W N REF1004 ♦ Micropower VOLTAGE REFERENCE DESCRIPTION FEATURES The REF1004 Micropower Voltage References are two terminal bandgap reference diodes designed to provide high accuracy and excellent temperature characteristics at very low operating currents. Optimization of the key

BFT92

Abstract: BFR92 BFR92A 727 Transistor power values BFT92V
Contextual Info: 11 N AMER P H IL IP S /D IS C R E T E 2SE D b b S B ^ l O O lö lb ? S BFT92 T-3f-J7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor in a microminiature plastic envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems,

T 1S98

Abstract: 38510/159 FCT ckt HPF 505 1N3064
Contextual Info: MIL-M-38510/1593 1QUÀLÏrICATI ON 21 JULY 1986 I REQUIREMENTS I REMOVED SUPERSEDING MIL-M-38510/159A 11 June 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, TTL, SHIFT REGISTERS, MONOLITHIC SILICON 1NACIIVli FOR HEWDLSISH AFTER' BATE dF THIS REvtSl6N.~|

TIC 136 Transistor

Abstract: mrf412
Contextual Info: MOTOROLA SC ÎXSTRS/R "flT ]>F|k3l.72Si| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier