DD52 Search Results

DD52RC

Abstract: AX-8292
Contextual Info: Ordering number:EN4404A DD52RC Silicon Diffused Junction Type Damper Diode for Ultrahigh-Definition Display Applications Features Package Dimensions • High breakdown voltage VRRM:1500V . · High reliability. · One-point fixing type plastic molded package

DD52RC

Contextual Info: Ordering number:EN4404A DD52RC Silicon Diffused Junction Type Damper Diode for Ultrahigh-Definition Display Applications Features Package Dimensions • High breakdown voltage VRRM:1500V . · High reliability. · One-point fixing type plastic molded package

U48B

Abstract: DDR2 Mechanical Dimensions
Contextual Info: 2 Gigabit Stacked DDR2 SDRAM DD52E 512Mb x 4 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA. • 8 x 11.5 x 1.35mm BGA Package • 50% Space Savings Over Two 60 Ball BGA Packages • Reduced Trace Lengths Over Two BGA Packages • Lead Free—High Temperature Solder Balls

BYT230PI1000

Contextual Info: 25E D • Lb53131 DD52S0S fl DEVELOPMENT DATA BYT230PIV-1000 This data sheet contains advance information and specifications are subject to change w ithout notice. 7 - 0 3 -1^ N AUER PHILIPS/DISCRETE ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in ISOTOP envelopes, featuring low forward

transistor dd52

Abstract: DB714 DD52 DC736 DD477 DF782 DD749
Contextual Info: CASE STYLES OUTLINE DIMENSIONS inch mm case no. DB714 DC736 DC737 DD52 DD477 DD749 DF782 A B C D E F G H J K .160 4.06 .150 3.81 .160 4.06 .050 1.27 .040 1.02 .025 .064 .028 .71 .065 1.65 .190 4.83 .030 0.76 — .61 — 15.49 — 1.90 .812 — 48.26 20.64

nitride

Abstract: 16-727
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY DS1000M-25 Nov-95 9542 E2 OMEDATA STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-16609, P-16727 ASSEMBLY LOT NO PROCESS TYPE DD521451AEA 1.2µ NITRIDE READPOINT Sample Size/No. of Fails

DD52

Abstract: transistor dd52
Contextual Info: Case Style DD DD52 Outline Dimensions CASE# A B C D E F G 2.00 2.00 .75 .90 .156 1.688 .125 50.80 (50.80) (19.05) (22.86) (3.96) (42.88) (3.18) Dimensions are in inches (mm). Tolerances: 2 Pl. + .03; 3 Pl. + .015 DD52 H .38 (9.65) J K L M 1.00 .50 1.00 1.25

Contextual Info: TOSHIBA LOGIC/MEMORY 4ÖE D DD523Ô0 32,768 W O R D x 9 BIT BiCM O S STATIC R A M 1 PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS

p 9552

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY DS1000M-25 Feb-96 9552 E2 OMEDATA STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-16943, P-16983 ASSEMBLY LOT NO PROCESS TYPE DD525039AFA 1.2µ NITRIDE READPOINT Sample Size/No. of Fails

Contextual Info: POWER SPLITTERS/COMBINERS 50 & 75Ω 4 WAY-0° 2 kHz to 8.4 GHz ZBSC-4 MODEL NO. ZFSC-4 FREQ. RANGE MHz ISOLATION dB fL-fU Typ. Min. Typ. Min. Typ. Min. L INSERTION LOSS, dB Above 6dB M 18 15 U M U L Typ. Max. Typ. Max. M U Max. Max. Max. AMPLITUDE UNBALANCE

KS D 9502

Abstract: Thermometer LM35 equivalent
Contextual Info: ANALOG DEVICES Low Voltage SOT-23 Temperature Sensors ADT41/ADT42/ADT43 FEATURES Low Voltage Operation 2.7 V to 12 V Calibrated Directly in °C 10 mV/°C Scale Factor (20 mV/°C on ADT43) ±2°C Accuracy Over Temperature (typ) ±0.5°C Linearity (typ) Stable with Large Capacitive Loads

Contextual Info: TOSHIBA TIM7984-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power * pidB = 45.0 dBm at 7.9 G H z to 8.4 GHz

KA230/254EEV2FDDTAH

Contextual Info: ANALOG DEVICES GSM 3 V Transceiver IF Subsystem AD6432 FUNCTIONAL BLOCK DIAGRAM FEATURES Fully Compliant with Standard and Enhanced GSM Specification DC-350 MHz RF Bandwidths 80 dB Gain Control Range l/Q Modulation and Demodulation Onboard Phase Locked Tunable Oscillator

Contextual Info: POWER SPLITTERS/COMBINERS 4 WAY-0° 2 kHz to 8.4 GHz ZBSC-4 MODEL NO. ZFSC-4 FREQ. RANGE MHz fL-fU 50&75Ω ISOLATION dB ZMSC-4 INSERTION LOSS, dB Above 6dB ZSC-4 PHASE UNBALANCE Degrees AMPLITUDE UNBALANCE dB CASE STYLE L M Typ. Min. Typ. Min. U L Typ. Min. Typ. Max.

H11-5051

Abstract: H11-5043-2 H11-5051-2 HI1-5043-5 IH5048
Contextual Info: 4 3 □E E 71 GD52011 5 b*ì I I HAS 2J H A R R I S S E M I C O N D U C T O R HI-5040 thru HI-5051 H1-5046A and HI-5047A CMOS Analog Switches December 1993 Features • Description ±15V Wide Analog Signal Range > Low “ON” Resistance 25ft Typical • High Current Capability 60mA (Typical)

dk52

Abstract: P-15782 DK53 P15890 P-16795 148259 p16038 P-17201 C19517 P-15837
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320

ZA4PD-2-S

Abstract: DD52
Contextual Info: Coaxial Power Splitter/Combiner 4 Way-0° 50Ω ZA4PD-2 1000 to 2000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter • • • • 10W max. Internal Dissipation wideband, 1000 to 2000 MHz

Contextual Info: P ow er S p u tters/C o m b in ers 50 & 75Q 4 WaY-0° 2 kHz to8.4 GHz ZBSC-4 ZCSC-4 FREQ. RANGE MHz MODEL NO. ISOLATION dB L V fu Typ. Min M ZFSC-4 INSERTION LOSS, dB Above 6dB U L Typ. Min. Typ. Min. M PHASE UNBALANCE Degrees L U Typ. Max. Typ. Max. Typ. Max.

Bluetooth Energy Meter ckt diagram

Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11
Contextual Info: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3

Contextual Info: Coaxial ZA4PD-2+ ZA4PD-2 Power Splitter/Combiner 4 Way-0° 50Ω 1000 to 2000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter Internal Dissipation • • • • 10W max.

Contextual Info: Coaxial ZA4PD-4+ ZA4PD-4 Power Splitter/Combiner 4 Way-0° 50Ω 2000 to 4200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter •฀฀wideband,฀2000฀to฀4200฀MHz •฀ good฀isolation,฀25฀dB฀typ.

S213A

Contextual Info: • 4302271 0052133 HHAS 000 ¡D “ E« HI-1818A, HI-1828A Low Resistance, Single 8 Channel and Differential 4 Channel CMOS Analog Multiplexers December 1993 Features Description • S ig n a l R ange o f+ 1 5 V The HI-1818A and H I-1828A are m onolithic high perfor­

Contextual Info: IS43/46LD16160A IS43/46LD32800A 256Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION JULY 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O

dk52

Abstract: P-16890 17872 p1908 P1875 P-18701
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-96 Sep-96