MARKING 720 TRANSISTOR Search Results

MARKING 720

Abstract: P008B BF720 BF721
Contextual Info: BF720 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BF720 720 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS BF721

ABE 721

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP

B 722 P

Abstract: BB 722 DC DC BB 722
Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP

BF marking code

Abstract: MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110
Contextual Info: NPN Silicon High-Voltage Transistors ● ● ● ● ● BF 720 BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP

Contextual Info: 3SE D • 0231*320 G01b7b2 7 « S I P NPN Silicon High-Voltage Transistors BF 720; BF 722 _SIEMENS/ SPCL-, SEMICONDS T - 33- OS' Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

FMMT720TA

Abstract: FMMT720 MARKING 720 SOT23
Contextual Info: A Product Line of Diodes Incorporated FMMT720 40V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -40V IC = -1.5A Continuous Collector Current ICM = -4A Peak Pulse Current

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2274 NPN SILICON TRANSISTOR SWITCHING REGULATOR APPLICATIONS  FEATURES * High breakdown voltage VCBO≥1400V . * Ultra high-speed switching. * Wide SOA.  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

Contextual Info: IPB180N10S4-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS on 2.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)

Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N06H1

Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode
Contextual Info: IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

Contextual Info: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level 1 • Qualified according to JEDEC for target applications

Contextual Info: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 1.4 mW • Superior thermal resistance ID 180 A • N-channel, normal level • Qualified according to JEDEC for target applications

K2610

Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610
Contextual Info: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs|= 4.4 S (typ.)

4N04H0

Abstract: IPB180N04S4-H0 DIODE D180 PG-TO263-7-3 DD12V ipb180n04
Contextual Info: IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on 1.1 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)

K2610

Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261
Contextual Info: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)

mosfet for 900V, 6A

Abstract: F109 FQA9N90
Contextual Info: QFET FQA9N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQA9N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: Transistors SMD Type Product specification 2SC5356 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 High DC current gain: hFE = 15 min (IC = 0.15 A)

FQA9N90

Contextual Info: QFET FQA9N90 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

2SC5356

Abstract: smd marking TF
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffused Type 2SC5356 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 High DC current gain: hFE = 15 min (IC = 0.15 A)

Contextual Info: Transistors IC SMD Type Product specification BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

transistor 720 smd

Abstract: FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot
Contextual Info: Transistors IC SMD Type Switching Transistor FMMT720 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 IC CONT 2.5A. 1 0.55 625mW power dissipation. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 IC up to 10A peak pulse current. +0.05 0.1-0.01

ic 810

Abstract: IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistors BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

Contextual Info: Central CZTA77 Semiconductor Corp. SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA77 type is a Silicon PNP Darlington Transistor man­ ufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed