IPB180N06S4-H1 Search Results
IPB180N06S4-H1 Datasheets (3)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB180N06S4-H1 |
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Single: N-Channel 60V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 1.7 mOhm; ID (max): 180.0 A; RthJC (max): 0.6 K/W; | Original | 176.5KB | 9 | ||
| IPB180N06S4H1ATMA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 180A TO263-7 | Original | 176.95KB | |||
| IPB180N06S4H1ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 180A TO263-7 | Original | 176.95KB |
IPB180N06S4-H1 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB180N06S4H1ATMA2MOSFETs N-Ch 60V 180A D2PAK-6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB180N06S4H1ATMA2 | 86 |
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IPB180N06S4H1ATMA2 | 1,000 | 1,000 |
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Infineon Technologies AG IPB180N06S4-H1POWER FIELD-EFFECT TRANSISTOR, 180A I(D), 60V, 0.0017OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB180N06S4-H1 | 21 |
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Buy Now | |||||||