MARKING 350 IC Search Results

1df transistor

Abstract: FJV42
Contextual Info: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO

Contextual Info: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

fv1043

Abstract: FV-1043 marking code diode DU marking code db3 100MHZ DO35 RS-296-D IC marking code D3 DB3-TR
Contextual Info: TAK CHEONG 350 mW DO-35 Hermetically Sealed Glass AFC / Trigger Diodes Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ AXIAL LEAD DO35 Operating Junction Temperature DEVICE MARKING DIAGRAM

Contextual Info: M T4C4003J lEG X 4 DRAM M IC R O N 1 MEG DRAM X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View OPTIONS 20-Pin ZIP (DC-1) (DB-2) DQ1 DQ2 WE RAS A9 MARKING • Timing 70ns access 80ns access • Packages Plastic SOJ (300 mil) Plastic ZIP (350 mil)

KEP32

Abstract: HEP32 HP32 MC100EP32 MC10EP32
Contextual Info: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

cfy 14 siemens

Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
Contextual Info: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5

Contextual Info: Data Sheet DUAL 300mA LDO REGULATORS AP2402 General Description Features The AP2402 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each

Contextual Info: Preliminary Datasheet DUAL 300mA LDO REGULATORS AP2402 General Description Features The AP2402 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each

K1 SOT23

Contextual Info: A Product Line of Diodes Incorporated FMMT6520 350V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > -350V Maximum Continuous Collector Current IC = -500mA 330mW power dissipation

transistor D 288

Abstract: transistor a102
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 88NXX Preliminary CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR „ DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A

transistor a102

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 88NXX CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR  DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external

Contextual Info: IC SMD Type Product specification KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 0.55 Low voltage (max. 20 V) 2 Very low feedback capacitance (typ. 350 fF). +0.1 0.95-0.1 +0.1 1.9-0.1

GC3-K026D

Abstract: TK637 SON2017-6 TK637xxS TK63733b TK63733 toko ldo regulator tk sot23-5
Contextual Info: APPLICATION MANUAL Capacitor-less CMOS LDO Regulator IC TK637xxB/H/S CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT

TK63733

Abstract: TK637xxS SON2017-6 TK63715B TK63718B TK63725B TK63728B TK63730 TK63733b toko ldo regulator tk sot23-5
Contextual Info: APPLICATION MANUAL Capacitor-less CMOS LDO Regulator IC TK637xxB/H/S CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT

sot23-5 d31 datasheet

Abstract: TK637xxB TK637xxS Toko 10mm marking code 10 sot23 marking d29 sot23 SON2017-6
Contextual Info: APPLICATION MANUAL 150mA, Capacitor-less, Low IQ, CMOS LDO Regulator IC TK637xxB/H/S CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

TK63133

Abstract: TK63115B marking code C33 CM05B TK63118B TK63128B TK63130B TK631xxB TOKO 10K SON2017-6
Contextual Info: APPLICATION MANUAL CMOS LDO Regulator IC TK631xxB/H/S CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT 10 . TYPICAL CHARACTERISTICS

TK63133

Abstract: marking code C15 TK63128B TK63128 TK63115B MARK E31 SOT23-5 C01 SOT23 MARKING C25 SOT23 MARKING CODE c25 Toko 10mm
Contextual Info: APPLICATION MANUAL CMOS LDO Regulator IC TK631xxB/H/S CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT 10 . TYPICAL CHARACTERISTICS

Contextual Info: Transistors IC SMD Type Product specification FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE sat 40mÙ at 4A.

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

TLP2368

Abstract: 11-4L1S EN60747 114L1
Contextual Info: TLP2368 Photocouplers GaAℓAs Infrared LED & Photo IC TLP2368 1. Applications • Factory Automation FA • Plasma Display Panels (PDPs) • Measurement Instrumentation 2. General The Toshiba TLP2368 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain,

Contextual Info: MIXA10W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA10W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required