MMBT6517 Search Results

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating

MMBT6517LT

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous

MMBT6517LT1

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous

Contextual Info: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 350 V Collector − Base Voltage

MMBT6517

Abstract: marking mmbt6517
Contextual Info: Transistors SMD Type High Voltage Transistors MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating

MMBT6517LT1

Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G 300MS
Contextual Info: MMBT6517LT1 High Voltage Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 Vdc Collector − Base Voltage VCBO 350 Vdc Emitter − Base Voltage

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

Contextual Info: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage

Contextual Info: High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current

MMBT6517LT1

Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G SOT23 1Z
Contextual Info: MMBT6517LT1 High Voltage Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collectorā - āEmitter Voltage VCEO 350 Vdc Collectorā -āBase Voltage VCBO 350 Vdc

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • x Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 350 Vdc Collector – Base Voltage

msd7000

Abstract: MMBT6517LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

MMBT6517LT1G

Abstract: MMBT6517LT3G marking code 1z
Contextual Info: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage

Contextual Info: High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current

Contextual Info: Product specification MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

NSVMMBT6517LT1G

Contextual Info: MMBT6517L, MMBT6517L High Voltage Transistor NPN Silicon http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

2n6517 sot

Contextual Info: Bipolar Transistors High Voltage Transistors > 100 V NPN − MPSW42 − BF393 2N5551 − 2N6517 MPSA42 − BF422 2N5550 2N6515 MMBT6517LT1 − MMBTA42LT1 − MMBTA43LT1 MMBT5551LT1 − MMBT5550LT1 PZTA96ST1 BSP19AT1 PZTA42T1 − BF720T1 MSD42WT1 V(BR)CEO

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 350 Vdc Collector −Base Voltage VCBO 350 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc

marking 8b sot-23

Abstract: MMBT6517LT1
Contextual Info: MOTOROLA Order this document by MMBT6517LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO

sot23 marking 1z

Abstract: mmbt6517lt1g MMBT6517LT1 MMBT6517LT3 MMBT6517LT3G
Contextual Info: MMBT6517LT1 High Voltage Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collectorā - āEmitter Voltage VCEO 350 V Collectorā -āBase Voltage VCBO 350 V Emitterā - āBase Voltage

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References