MARKING 1R NPN Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon z Pb-Free Package is Available. LMBT5088LT1G LMBT5089LT1G ORDERING INFORMATION Device Marking LMBT5088LT1G 1Q LMBT5089LT1G LMBT5088LT3G 1R 1Q LMBT5089LT3G 1R Shipping 3000/Tape & Reel 3000/Tape & Reel

c 5088

Abstract: CMBT5088 CMBT5089
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

TMPTA06

Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE

BCW60BLT1

Abstract: BCW60CLT1 BCW60DLT1 marking 1R PNP marking code 1Y
Contextual Info: BCW60LT1 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61LT1 are recommended.

Contextual Info: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)

MMBT5089

Abstract: MMBT5088
Contextual Info: Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

Contextual Info: Product specification MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

marking qd sc59

Abstract: rn1425 RN1426
Contextual Info: SILICON NPN EPITAXIAL TYPE RN1421-RN1427 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT +0.5 2 . 5 - 0.3 AND DRIVER CIRCUIT APPLICATIONS. • High Current Type I^(MAX. =800mA) • With Built-in Baias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts Namufacturing Process

TMPT6429

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25

VSS010

Abstract: marking AAW VSS030
Contextual Info: MCP6401/1R/1U/2/4/6/7/9 1 MHz, 45 µA Op Amps Features Description • • • • • • The Microchip Technology Inc. MCP6401/1R/1U/2/4/6/7/9 family of operational amplifiers op amps has low quiescent current (45 µA, typical) and rail-to-rail input and output

2n 5088 transistor

Abstract: SOT-23 CEB
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage : KST5088 : KST5089 Collector-Emitter Voltage : KST5088 : KST5089 Emitter-Base Voltage Collector Current

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBT5088LT1 MMBT5089LT1* Low Noise Transistors NPN Silicon 'Motorola Preferred Device MAXIMUM RATINGS Sym bol 5088LT1 5089LT1 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage VCBO 35 30 Vdc R ating

KST5088

Abstract: KST5089 MARK 5D SOT
Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 PMST5088; PMST5089 NPN general purpose transistors Product data sheet Supersedes data of 1997 May 22 1999 Apr 22 NXP Semiconductors Product data sheet NPN general purpose transistors PMST5088; PMST5089 PINNING

IC-3035

Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1 MMBT5088 m182 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon COLLECTOR 3 MMBT5088LT1 MMBT5089LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 5088LT 15089LT1 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

Contextual Info: Low Noise Transistors NPN Silicon COLLECTOR 3 MMBT5088LT1 MMBT5089LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 5088LT 15089LT1 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO

MMBT5089LT1

Abstract: 5089LT1
Contextual Info: ON Semiconductort MMBT5088LT1 MMBT5089LT1 Low Noise Transistors NPN Silicon MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating 1 Symbol 5088LT1 5089LT1 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage

N1106

Contextual Info: TOSHIBA RN1101-RN1106 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1 .6 Í 02 0.8 ± 0.1 "O oo +I •

G1 TRANSISTOR SOT 23 PNP

Abstract: transistor marking 2L
Contextual Info: SOT-23 TRANSISTORS continued Darlingtons The following table is a listing of small-signal devices that have very high hpE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1-Base, 2-Emitter, 3-Collector