RN1422 Search Results

Contextual Info: T O S H IB A RN1421 ~RN1427 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS + 0.5 2 .5 -0 .3 + 0.25

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA) z With built-in bias resistors

RN1423

Abstract: RN1427 RN1424 RN1421 RN1422 RN1425 RN1426 RN2401 RN2406
Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC (max) = 800mA) l With built-in bias resistors

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC (max) = 800mA) l With built-in bias resistors

Contextual Info: TOSHIBA RN1421-RN1427 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (MAX.) = 800mA)

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA) With built-in bias resistors

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA)

RN1421

Abstract: RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN2401 RN2406
Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA) z With built-in bias resistors

RN1425

Abstract: Transistor 1427 RN1421 RN1422 RN1423 RN1424 RN1426 RN1427 RN2401 RN2406
Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC (max) = 800mA) With built-in bias resistors

RN1424

Abstract: RN1425 RN1427 RN1422 RN1421 RN1423 RN1426 RN2421 RN2427
Contextual Info: RN1421～RN1427 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

RN1421

Abstract: RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN2401 RN2406
Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA) With built-in bias resistors

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA)

1421-RN

Contextual Info: TO SH IBA RN 1421-RN 1427 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (MAX.) = 800 mA)

RN1424

Abstract: RN1421 RN1422 RN1423 RN1425 RN1426 RN1427 RN2421 RN2427
Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA)

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

marking qd sc59

Abstract: rn1425 RN1426
Contextual Info: SILICON NPN EPITAXIAL TYPE RN1421-RN1427 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT +0.5 2 . 5 - 0.3 AND DRIVER CIRCUIT APPLICATIONS. • High Current Type I^(MAX. =800mA) • With Built-in Baias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts Namufacturing Process