MARK EDO Search Results

FRMB1211C-TR

Abstract: 251C
Contextual Info: 3 # # [ E * SYM. S-No. : 025071 2006. _ K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- G1. 18 A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3 :7 / - F

FYMG1211C-TR

Abstract: ltt2 251C
Contextual Info: 3 # # [ E * SYM. S-No. : 025071 K tt Í ZONE I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F

FAMB1211C-TR

Abstract: diode ED 68 251C 0118mm
Contextual Info: 3 # # [ E* SYM. S-No. : 025071 2 0 0 6 . _ G1. K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- 18 A I - 7 Dimensions t 'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F

FYMB1211C-TR

Abstract: 251C
Contextual Info: 3 # # [ E * SYM. S-N o. : 025071 K Í tt ZONE I I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3:7 / - F

FAMG1211C-TR

Abstract: sfeb FAMG1211C 251C WM Mark code
Contextual Info: 3 # # [ E * E « SYM. ZONE S-No. : 025071 Í I ♦ R E V IS IO N S REV. NO. _ G1. 18 A B ft in * * * NTF. NO. DATE REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad 1. 3: 7 / - F

Dresser Instrument Division

Abstract: miniature pressure switch D-52499 reverse osmosis
Contextual Info: A-SERIES Miniature Pressure Switch LOOK FOR THIS MARK ON OUR PRODUCTS BULLETIN SW-14 A-SERIES PRODUCT INFORMATlON The Ashcroft A-Series switch line is designed for alarm, shutdown, control and interlock applications for a wide variety of processes and equipment.

Contextual Info: = CL-SH7660 =CIRR U S LOGIC Preliminary Product Bulletin FEATURES • ■ Advanced Architecture ATA Disk Controller Ultra DMA66 support — Host data rates up to 66.6 Mbytes/sec. ID-less architecture — SMASH engine — sector mark and split handling

80196 internal architecture diagram

Abstract: intel 80196 microcontroller pin diagram CL-SH7660 68HC11 68HC16 TMS320 80196 microcontroller pin diagram 74341 80196 MEMORY INTERFACE intel 80196 microcontroller
Contextual Info: CL-SH7660 Preliminary Product Bulletin FEATURES • Ultra DMA66 support Advanced Architecture ATA Disk Controller — Host data rates up to 66.6 Mbytes/sec. ■ ID-less architecture — SMASH engine — sector mark and split handling — Defect management and logical sector mapping

PPC823

Abstract: PPC8260 MT4632M16 MGT5100 MT48LC16M16A2 MT46V16M8 MT46V32M8 MT46V64M8 MT48LC16M16 sdr sdram reference
Contextual Info: Application Note AN2248/D Rev. 0, 01/2002 Using the MGT5100 SDRAM Controller by Mark Jonas and Davide Santo Driver Information Systems Munich, Germany Introduction Synchronous Dynamic RAM SDRAM and Double Data Rate Synchronous Dynamic RAM (DDR-SDRAM or simply DDR) are among today’s preferred

datasheet MC68000

Abstract: hardware interface MC68000 MHB 2114 QFP-64 bta 06 400 v PowerPC 740 reference manual MPC603EFE133LN VME to isa bridge hc 7400 BTA 18 800
Contextual Info: 32-BIT EMBEDDED PROCESSORS QUARTER 1, 2004 SG1001/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS About This Revision–Q1/2004 A summary of new information is provided in this section. In addition, a change bar appears in the left margin of every page referenced in this section to mark the

PPC823

Abstract: MGT5100 MT48LC16M16A2 AN2248 0X0054 MT48LC32M16A2 PPC8260 MT46V64M8 equivalent MT48LC2M32B2 MT46V32M16
Contextual Info: Application Note AN2248/D Rev. 1, 02/2002 Using the MGT5100 SDRAM Controller by Mark Jonas and Davide Santo Driver Information Systems Munich, Germany Introduction Synchronous Dynamic RAM SDRAM and Double Data Rate Synchronous Dynamic RAM (DDR-SDRAM or simply DDR) are among today’s preferred memories where

Contextual Info: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 Features Options Mark

Contextual Info: Rect i f i erDi ode Si ngl e •外観図 M1FE60 OUTLI NE Package：M1F t ：mm Uni カソードマーク Cathode mark ① 特 長 煙小型 SMD 煙高 ESD Q１０１準拠 煙AEC- N 00 00 ① ② （例） 管理番号 Control No. 品名略号 Type No. Feat

Contextual Info: Rect i f i erDi ode Si ngl e •外観図 D1FE60 OUTLI NE Package：1F t ：mm Uni ① 特 長 煙小型 SMD 煙高 ESD Q１０１準拠 煙AEC- 品名略号 Type No. ② （例） ロット記号 Date code ① 2.5 600V1A E6 00 00 カソードマーク Cathode mark

Contextual Info: UNCONTROLLED DOCUMENT A N D IE MARK TOP VIEW 1E 316 1 1,3,5,7. ANODE 2E 315 2 2.4.6.B. CATHODE 3E 314 3 4E 313 4 5E 312 5 6E 311 6 7E 310 7 BE 3 9 8 1 9 ,8 4 3 ,5 0 CO,1 3 8 ] 13.00* 1 3 .0 0 * 3.00 E0.U 8] 0,26 [0.0L0] 7,6 2 L\ K T J 0.40 E0.016] = 2 .7 0 [0.106:

MSM541

Abstract: MSM5416258B
Contextual Info: OKI Semiconductor Technical Information MSM5416258B 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power

MT41LC256K32D4

Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
Contextual Info: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏

PV1000

Abstract: 120-pin scsi connector mmx circuit diagram 82430HX 120 pin scsi connector Pentium Extended Temperature MMX Processor AMI 602 MINI-DIN RECEPTACLE SIMM FLASH MEMORY MODULE 72pin 16bit 430HX
Contextual Info: F e a t ur e s O r d e r i ng I nf o r m a t i o n • Single or dual Pentium P55C MMX processors • Up to 233 MHz Part Number Base SBC PV1000-200 • Intel 430HX Triton chipset PV1000-233 • Up to 512MB EDO memory Description Single board computer with 200 MHz Pentium with MMX

ba 4916

Abstract: transistor fp 1016 C516 diode marking code HP2 SP 8616 9C016 BA 8A16 1D16 eprom 2516 IC 4016 PIN DIAGRAM
Contextual Info: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔

ss 6616

Abstract: 9316 ROM transistor A916 IC B316 transistor d716 b816 BA 8A16 8316 rOM transistor B616 b716 transistor
Contextual Info: MITSUBISHI MICROCOMPUTERS M35053-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔

0A95

Abstract: DB37M
Contextual Info: •woge P R E L IM IN A R Y MX93022A 1.0 GENERAL DESCRIPTIONS 2.0 The MX93022A is an engine chip for Digital-AnsweringMachine DAM . • 4.8K bps compression rate with silence compression. • Maximum 8 Personal Mail Supports (Separate 127 ICMs) • DTMF generation and detection with near-end echo

mb87020

Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER
Contextual Info: F U J I T S U Master Product Selector Guide FUJITSU MICROELECTRONICS, INC. Visit our web site for the latest information: http://www.fujitsumicro.com Customer Response Center: For semiconductor products, flat panel displays, and PC cards in the U.S., Canada and Mexico,

STV0987

Abstract: SMIA65
Contextual Info: VX6953CB 5.1 megapixel EDOF camera module Datasheet - production data Description The VX6953CB camera module is designed for use across a range of mobile phone handsets and accessories. It embeds high quality still camera functions and also supports HD video.

Contextual Info: S71PL-N MirrorBit MCPs S71PL256N, S71PL127N, S71PL129N 256/128/128 Megabit 16/8/8 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write, Page Mode Flash Memory Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV