MSM541 Search Results

MSM5416258A

Abstract: msm5416258
Contextual Info: E2L0047-28-Z2 This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 ¡ Semiconductor MSM5416258A ¡ Semiconductor 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate

MSM5416263

Abstract: 256x16* STATIC RAM weland SM5416
Contextual Info: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

AA 170 circit diagram

Abstract: 256KX16 MSM5416256 ucas zip
Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY

MSM5416283-60

Abstract: MSM5416283 SAM256
Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MSM5416272

Contextual Info: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM5416125A

Contextual Info: E2L0049-17-Y1 ¡ Semiconductor MSM5416125A ¡ Semiconductor This version: Jan. 1998 MSM5416125A Previous version: Dec. 1996 131,072-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The OKI MSM5416125A is a 128K-word ¥ 16-bit dynamic RAM fabricated in OKI's CMOS silicon

Contextual Info: Oki Semiconductor MSM5416258A 256K-Word x 16-Bit DRAM: Fast-Page-Mode Type with EDO DESCRIPTION The MSM5416258A is a 262,144-word by 16-bit DRAM fabricated in O ki's silicon-gate CMOS technology. The M SM 5416258A achieves high integration, h igh -speed operation, an d low p ow er consum ption

256kx16 ucas zip

Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance

Contextual Info: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and

Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

Contextual Info: OKI Semiconductor Technical Information MSM5416258B 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power

44TSOPII

Contextual Info: J2L0034-17-Y1 作成：1998年 1月 MSM5412222 l 前回作成：1997年 9月 ¡ 電子デバイス MSM5412222 暫定 262,214-Wordx12-Bit FIELD MEMORY n 概要 MSM5412222は512行×512列×12ビットのCMOSダイナミックメモリで、高速非同期リード／ラ

Contextual Info: J2L0021-17-Y1 作成：1998年 1月 MSM5416273 l 前回作成：1997年 9月 ¡ 電子デバイス MSM5416273 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー

MSM5412222B

Abstract: MSM518222A MSM5412222B-25TS-K MSM5412222B-30TS-K
Contextual Info: OKI Semiconductor MSM5412222B FEDS5412222B-01 Issue Date: Nov.,20, 2002 262,214-Word x 12-Bit Field Memory GENERAL DESCRIPTION The OKI MSM5412222B is a high performance 3-Mbit, 256K × 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

MSM5416256

Contextual Info: O K I Semiconductor MSII5 4 1 6 2 5 8 A_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word x 16-bit configuration fast page mode type DRAM with EDO. The MSM5416258A achieves high integration, high-speed operation, and low-power consumption

Contextual Info: O K I Semiconductor MSM5412222 262,214-Word x 12-Bit Field Memory DESCRIPTION The OKI MSM5412222 is a high performance 3-Mbit, 256K x 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs,

MSMS416273

Contextual Info: O K I Semiconductor MSMS416273 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MSM5412222A

Abstract: msm518222a MSM5412222A-25TA MSM5412222A-30TA
Contextual Info: FEDS5412222A-02 1Semiconductor MSM5412222A This version: Aug. 2000 Previous version: Sep. 1999 262,214-Word x 12-Bit Field Memory DESCRIPTION The OKI MSM5412222A is a high performance 3-Mbit, 256K × 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

MSM541

Abstract: MSM5416258B
Contextual Info: OKI Semiconductor Technical Information MSM5416258B 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power

MSM5416250

Abstract: nu ja8
Contextual Info: OKI Semiconductor MSM5416250 ~ OKI SUPER HIGH SPEED GRAPHICS DRAM T echnical Inform ation 262,144-W ord x 16-Bit D Y N A M IC RA M : FA ST PA G E M O D E T Y PE W ITH ED O DESCRIPTION The MSM5416250 is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate

SOJ42-P-400-1

Abstract: MSM5416258B
Contextual Info: OKI Semiconductor MSM5416258B Technical Information 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power

MSM5416283-60

Abstract: MSM5416283 ssop64
Contextual Info: E2L0023-17-Y1 ¡ Semiconductor MSM5416283 ¡ Semiconductor This version: Jan. 1998 MSM5416283 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM5416262

Contextual Info: E2L0018-17-Y1 ¡ Semiconductor MSM5416262 ¡ Semiconductor This version: Jan. 1998 MSM5416262 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416262 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM5416283

Abstract: 150 LMR 60 MSM5416283-60
Contextual Info: FEDS5416283-05 ¡ Semiconductor MSM5416283 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and