MAEK Search Results

2716 eprom manual programming by switch

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

RAYTHEON

Abstract: RMPA39000
Contextual Info: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier Description Features The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs

Contextual Info: e r tv w s SnwSiiB bpaM tTSSSm >•1 1jSwHtejSthmtTIMMnaTSrt !MWwiii ti Mi <mwi_ CUSTOMER DRAWING g,42±0,10 4,00*0 10 \] 0,45X40 I flg 7 l + «► 0.20 A D I 2.g8l EET I l . g j X19±0,10 28,70±0,05 2 - 01.00 4 3 2 1 REVISIONS SYM EON A HK4676 1

RAYTHEON

Abstract: RMBA09500-58
Contextual Info: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and

RAYTHEON

Abstract: RMDA25000
Contextual Info: RMDA25000 23-28 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs

MMIC SWITCH

Abstract: RTPA5250-130
Contextual Info: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information

RAYTHEON

Abstract: Raytheon Company 7073 8251 RMPA29100
Contextual Info: RMPA29100 27-30 GHz Power Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMPA29100 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA29100 is a 3-stage GaAs

BL460

Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —

RAYTHEON

Abstract: RMPA39200
Contextual Info: RMPA39200 37-40 GHz 1.6 Watt Power Amplifier MMIC Description Features The Raytheon RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3-stage GaAs

M5L8259AP

Abstract: M5L8259 8259ap TFZV
Contextual Info: M ITSU B ISH I LS I» M5L8259AP PROGRAMMABLE INTERRUPT CONTROLLER DESCRIPTION The M5L8259AP is a programmable LSI for interrupt control. It is fabricated using N-channel silicon-gate ED-MOS tech­ nology and is designed to be used easily in connection with

TQ5300

Abstract: TQG 14.31818 kony 8.000000 kony 30mhz crystal oscillator HC49U70 SUNNY 4.194304 KONY hc49s 6MHZ HC49U 16.000000 Mhz kony vcxo KONY crystal
Contextual Info: Ordering information Return to product overview Resonator SMD All information subject to change Type CTT CV-MX Tape & Reel RoHS Conform External Dimensions Unit: mm Specifications Holder Type CTT CV-MX with Tape & Ree Frequency Range 10.000000 MHz internal capacitance C1, C2

bfi optilas

Abstract: RAYTHEON OC768 RMLA00400
Contextual Info: RMLA00400 40 Gb/s Transimpedance Amplifier ADVANCED INFORMATION Description Features The Raytheon RMLA00400 is a very high speed Transimpedance Amplifier TIA MMIC for 40 Gb/s (OC768) fiber optic systems. It is available in die form, and is manufactured using Raytheon’s advanced MHEMT process. The

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

DDR200

Abstract: DDR266A DDR266B NT5DS16M8AT NT5DS16M8AT-7K NT5DS32M4AT PC2100
Contextual Info: NT5DS32M4AT NT5DS16M8AT 128Mb Double Data Rate SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions, also aligns QFC transitions with CK during Read cycles • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS

je 3055

Abstract: RAYTHEON RMWM38001 RMWP38001
Contextual Info: RMWM38001 38 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,

RAYTHEON

Abstract: Raytheon RF Components noise amplifier RMWL38001
Contextual Info: RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Description Features The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In

RAYTHEON

Abstract: RMWB33001
Contextual Info: RMWB33001 33 GHz Buffer Amplifier MMIC PRODUCT INFORMATION Description Features The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in the LO chain of point to point radios, point to multi- point communications, LMDS, and other millimeter wave applications. In

an 7073

Abstract: RAYTHEON Raytheon Company RMWW12001
Contextual Info: RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Description Features The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon

murata 2.4 GHz filter

Abstract: pin configuration of 8251 RMPA2451B-58
Contextual Info: RMPA2451B-58 2.4-2.5 GHz GaAs MMIC Power Amplifier Description Features Raytheon RMPA2451B-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or

Sn92

Abstract: 9553 3M BA09 fan 7073 RAYTHEON raytheon ref RMBA09500-58 1008HS-390TKBC
Contextual Info: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and

long range gold detector circuit diagram

Abstract: RMWB24001 2.4 GHz buffer amplifier
Contextual Info: RMWB24001 24 GHz Buffer Amplifier MMIC PRODUCT INFORMATION Description Features The RMWB24001 is a 3-stage GaAs MMIC amplifier designed as a 17 to 24 GHz Buffer Amplifier for use in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications.

combiner THEORY

Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
Contextual Info: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective

RAYTHEON

Abstract: RMPA2053-103
Contextual Info: RMPA2053-103 3V WCDMA Power Amplifier Module with Analog Bias Control ADVANCED INFORMATION Description Features The RMPA2053-103 is a power amplifier module PAM for 3GPP Wideband CDMA (WCDMA) applications. The PAM has been specifically designed for low current draw at low power levels while maintaining high power

Contextual Info: RMWD38001 37-40 GHz Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMWD38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Driver Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction