MA4E2514L Search Results

MA4E2502

Abstract: MA4E2514 MA4E2514L MA4E2514L-1116 MA4E2514L-1116W MA4E2514M MA4E2514M-1116 MA4E2514M-1116W
Contextual Info: MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 Case Style 1116 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch

Contextual Info: SURMOUNT TM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair MA4E2514 SERIES Version 3.00 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits , No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection

Contextual Info: MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair M/A-COM Products Rev. V4 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

Contextual Info: > « fc ç ô M Preliminary Specification m a n A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V 2.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, M ultilayer Metalization with a Diffusion

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

MA4E2502L

Contextual Info: V f lf c w H SurMount Chip Schottky Diodes SurMount Chip Surface Mount Monolithic Low Barrier Schottky Diodes M A 4 E 2 5 0 0 Series Features • Singles, Pairs, Ring and Crossover Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization

Contextual Info: an A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours

ma4e250

Abstract: MA4E2503L
Contextual Info: Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features ● ● ● ● ● ● ● ● Singles, Pairs, Tees, Ring and Cross-over Quads Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours

Contextual Info: MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair M/A-COM Products Rev. V4 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

4e253

Contextual Info: S u r M o u n t C h ip S c h o t t k y D io d e s SurMount Chip Surface Mount Monolithic Low Barrier Schottky Diodes M A 4 E 2 5 0 0 Series Features • Singles, Pairs, Ring and Crossover Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization

MA40285

Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Contextual Info: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238

MA4E2514_Series

Abstract: MA4E2514 Series low barrier schottky MA4E2502 MA4E2514 MA4E2514L MA4E2514L-1116 MA4E2514L-1116W MA4E2514M MA4E2514M-1116
Contextual Info: MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair M/A-COM Products Rev. V5 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

Contextual Info: M a n A M P c o m p an y Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours