MA4E250 Search Results

Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

schottky diode MACOM SPICE model

Abstract: schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family
Contextual Info: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

schottky diode MACOM SPICE model Cjpar

Abstract: MACOM Schottky Diode
Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

MA4E2502L-1246

Abstract: MA4E2502 ma*2502 MA4E2502H MA4E2502L MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W MADS-002502
Contextual Info: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

Contextual Info: > « fc ç ô M Preliminary Specification m a n A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V 2.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, M ultilayer Metalization with a Diffusion

65rj

Contextual Info: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

Contextual Info: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

0201 footprint

Abstract: MA4E2501-1290 MA4E2501L-1290 MA4E2501L-1290W
Contextual Info: MA4E2501-1290 Series SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes Rev. V1 Features A • Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 600x300um Footprint • Surface Mountable in Microwave Circuits , No Wirebonds

Contextual Info: an A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours

MA4E2502

Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

MA4E2502L

Abstract: 50E-01
Contextual Info: MA4E2502L SurMount Surface Mount Chip Monolithic Low Barrier Schottky Diodes Preliminary Features n n n n n n n n Case Style1, 2 Reliable, Multi-layer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours Lower Susceptibility to ESD Damage

MA4E2502L-1246T

Abstract: ma*2502 MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W
Contextual Info: SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes MA4E2502 Series V 4.00 Features Case Style 1246 Extremely Low Parasitic Capitance and Inductance Suface Mountable in Microwave Circuits , No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch

Contextual Info: MA4E2501L-1290 SURMOUNT Low Barrier 0201 Silicon Schottky Diode Rev. V2 Features • Extremely Low Parasitic Capacitance and Inductance. • Extremely Small 0201 600x300um Footprint • Surface Mountable in Microwave Circuits. No Wire bonds Required. • Rugged HMIC Construction with Polyimide

ma4e250

Abstract: MA4E2503L
Contextual Info: Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features ● ● ● ● ● ● ● ● Singles, Pairs, Tees, Ring and Cross-over Quads Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours

MA4E2502_Series

Abstract: MA4E2502 Series mads-002502-1246hp MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246
Contextual Info: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

Contextual Info: M a n A M P c o m p an y Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours

MA4E2508L-1112

Abstract: MA4E2502 MA4E2508L-1112T MA4E2508L-1112W
Contextual Info: MA4E2508L-1112 SURMOUNTTM Low Barrier Silicon Schottky Diodes: Anti-Parallel Pair V 1.00 Case Style 1112 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch

low barrier schottky

Abstract: MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom
Contextual Info: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No

MA4E2508L-1112

Abstract: MA4E2502 MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112
Contextual Info: SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

MA4E2502

Abstract: MA4E2514 MA4E2514L MA4E2514L-1116 MA4E2514L-1116W MA4E2514M MA4E2514M-1116 MA4E2514M-1116W
Contextual Info: MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 Case Style 1116 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch

0201 footprint

Abstract: MA4E2501-1290 MA4E2501L-1290 MA4E2501L-1290T MA4E2501L-1290W
Contextual Info: SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 600x300um Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

Contextual Info: SURMOUNT TM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair MA4E2514 SERIES Version 3.00 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits , No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

Contextual Info: MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair M/A-COM Products Rev. V4 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide