MA2SV01 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit: mm For VCO 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. Unit Reverse voltage VR 6 V Junction temperature Tj 150 °C Storage temperature

MA2SV01

Contextual Info: Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. Unit Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.27 − 0.02 + 0.05 0.27 − 0.02 + 0.05 Rating 1.7 ± 0.1

MA2SV01

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit: mm For VCO 0.13+0.05 –0.02 0.27+0.05 –0.02 Unit Reverse voltage VR 6 V Junction temperature Tj 150 °C Storage temperature

MA2SV01

Contextual Info: Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. Unit Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.27 − 0.02 + 0.05 0.27 − 0.02 + 0.05 Rating 1.7 ± 0.1

Contextual Info: MA111 Variable Capacitance Diodes MA2SV01 Silicon epitaxial planer type Unit : mm For VCO 0.15 min. 0.15 min. +0.05 Small series resistance rD ● SS-Mini package, enabling down-sizing of the equipment and auto- +0.05 ● 0.27–0.02 Good linearity and large capacity ratio of VR – C D

MA2SV01

Abstract: MA2SV01 MATSUSHITA
Contextual Info: Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit: mm For VCO 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. Unit Reverse voltage VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.15 max. 0.7±0.1 Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit: mm For VCO 0.13+0.05 –0.02 0.27+0.05 –0.02 VR Junction temperature Tj Storage temperature Tstg 0.7±0.1 Unit 6 V 150

MA2SV01

Contextual Info: Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit: mm For VCO 0.13+0.05 –0.02 0.27+0.05 –0.02 5˚ • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • SS-Mini type package, allowing downsizing of equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit: mm For VCO 0.13+0.05 –0.02 0.27+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 5˚ • Good linearity and large capacitance-ratio in CD − VR relation

Contextual Info: Variable Capacitance Diodes MA2SV01 Silicon epitaxial planar type Unit: mm For VCO 0.13+0.05 –0.02 0.27+0.05 –0.02 5˚ • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • SS-Mini type package, allowing downsizing of equipment and

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

2-pin package

Contextual Info: New Subminiature Surface-Mount Package SSS Mini 2-Pin Package Series n Overview The Subminiature Surface-Mount Package Series with 1.0 mm x 0.6 mm x 0.52 mm in external size allows highdensity mounting. In addition, the flat-lead structure of the package ensures stable mounting quality with less

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率