MA2S771 Search Results

Contextual Info: bbE D INTEGRATE» DEVICE B 4ÔSS771 0015534 bMT « I D T CMOS SyncFlFO 256 X 18, 512 X 18,1024 x 18, 2048 x 18 and 4 096x18 ID T 7 2 2 0 5 L B ID T 7 2 2 1 5 L B ID T 7 2 2 2 5 L B ID T 7 2 2 3 5 L B ID T 7 2 2 4 5 L B Integrated Device Technology, Inc.

Contextual Info: INTEGRATE» DEVICE bbE D • 4BES771 □ □ 1 2 M cn CMOS SyncFIFO 64x8, 256x8,512x8, 1024 x 8, 2048 x 8 and 4096 x 8 715 « I D T IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 FEATURES: DESCRIPTION: • • • • • • • • • T he ID T 7 2 4 2 0 /7 2 2 0 0 /7 2 2 1 0 /7 2 2 2 0 /7 2 2 3 0 /7 2 2 4 0

Contextual Info: FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER IDT54/74FCT162H272AT/CT/ET ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: • • • < • • • • • • • 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps Low input and output leakage < I^ A (max.)

Contextual Info: IDT54/74FCT139T/AT/CT FAST CMOS DUAL 1-OF-4 DECODER WITH ENABLE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • The ID T 5 4 /7 4 F C T 1 3 9 T /A T /C T are dual 1-of-4 decoders built using an advanced dual metal C M O S technology. These

Contextual Info: 3.3V CMOS 20-BIT BUFFERS IDT54/74FCT163827A/B/C ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology The FCT163827A/B/C 20-bit buffers are built using ad­ vanced dual metal CMOS technology. These 20-bit bus

RUB25

Abstract: IDT7133SA7LA
Contextual Info: INTEGRATED 3ÛE DEVICE D • 4Û25771 DGQbbS7 1 ■ IDT PRELIMINARY IDT7133SA7LA IDT7143SA/LA CMOS DUAL-PORT RAMS 3 2 K 2 Kx 16-BIT Integrated Device Technology, Inc. RAMs. The IDT7133 is designed to be used as a stand-alone 16-bit dual-port RAM or as a "MASTER" dual-port RAM

H35V

Contextual Info: IDT54/74FCT240T/AT/CT/DT - 2240T/AT/CT IDT54/74FCT241T/AT/CT/DT - 2241T/AT/CT IDT54/74FCT244T/AT/CT/DT - 2244T/AT/CT IDT54/74FCT540T/AT/CT IDT54/74FCT541/2541T/AT/CT FAST CMOS OCTAL BUFFER/LINE DRIVERS FEATURES: DESCRIPTION: • Common features: - Low input and output leakage <1

GG1Q

Abstract: GG1Q171
Contextual Info: INTEGRATE» DEVICE m 47E D Mâ2S7?l GG1Q171 b • IDT IDT7M4068 IDT7MB40G8 256K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice T ech no logy, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic

Contextual Info: HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM IDT7014S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Military: 20/25/35ns max. — Commercial: 12/15/20/25ns (max.)

Contextual Info: SPNp jdf FAST CMOS 16-BIT BUFFER/LINE DRIVER Integrated Device Technology, Inc. IDT54/74FCT16244T/AT/CT/ET IDT54/74FCT162244T/AT/CT/ET IDT54/74FCT166244T/AT//CT IDT54/74FCT16xH244T/AT/CT/ET ADVANCE INFORMATION FEATURES: DESCRIPTION: • Common features: - 0.5 MICRON CMOS Technology

Contextual Info: INTEGRATE» DEVICE bflE T> • L4Û25771 0014204 207 ■ IDT PRELIMINARY IDT70V24S/L HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology« Inc. FEATURES: • M /S = H fo r B U S Y o u tp u t fla g o n M a s te r • T ru e D u a l-P o rte d m e m o ry c e lls w h ic h a llo w s im u lta ­

YFL 220

Contextual Info: 1 6 x 1 6 PARALLEL CMOS MULTIPLIER-ACCUMULATOR IDT7210L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The IDT7210 is a high-speed, low-power 1 6 x 1 6-bit parallel multiplier-accumulatorthat is ideally suited for real-time digital signal processing applications. Fabricated using CMOS

Contextual Info: I: HIGH SPEED 128K 8K x 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The ID T70825 is a high-speed 8K x 16bit Sequential Access Random Access Memory (SARAM). The SARAM

Contextual Info: INTEGRATED DEVICE _ bflE D • 4055771 0013031 flbl ■ IDT . fflffljp X fR'i CMOS SyncBiFlFO IDT72605 256 x 18 x 2 and 512 x 18 x 2 IDT72615 I dt Integrated D evice Technology, In c p o w e r bidirectional First-In , F irs t-O u t F IF O ) m em o rie s , with

HC 573 a

Contextual Info: IDT54/74FCT373/A/C IDT54/74FCT533/A/C IDT54/74FCT573/A/C FAST CMOS OCTAL TRANSPARENT LATCHES Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT54/74FCT373/A/C, ID T54/74FCT533/A/C and IDT54/74FCT573/A/C are octal transparent latches built us­

IDT72021

Abstract: IDT72031 IDT72041
Contextual Info: M7E D I N T E G R A T E D D E VI CE B 4025771 DGGIMMB ö H I D T CMOS PARALLEL FLAGGED FIFO WITH OE 1Kx9, 2 K x 9, 4 K x 9 ^ IDT72021 IDT72031 IDT72041 In te g ra te d D e v ic e Tec h n o lo g y, In c . FEATURES: DESCRIPTION: • • ID T 7 202 1/03 1/04 1s are high -spe ed, lo w -p ow er, du al-po rt

50G7028

Abstract: PMD 1000
Contextual Info: PHY-TC for 25.6 Mbps ATM Networks PRELIMINARY IDT77101 Integrated Device Technology, Inc. FEATURES • Performs the PHY-Transmission Convergence TC Sublayer functions for 25.6 Mpbs ATM Networks • Interfaces to Industry-Standard Physical Media Dependent (PMD) devices

Contextual Info: IDT79R3071 IDT79R3071E IDT79R3071 “ RISControllerTI Integrated Device Technology, Inc. FEATURES Large on-chip caches with user configurability — 16kB Instruction Cache, 4kB Data Cache — Dynamically configurable to 8kB Instruction Cache, 8kB Data Cache

Contextual Info: 11S8>s\i jdt HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM IDT7007S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location • High-speed access — Military: 25/35/55ns max.)

Contextual Info: 10e! » I D T GG12b47 The ID T 54/74F C T 16373T /A T /C T/E T and IDT54/ 74FCT162373T/AT/CT/ET 16-bit transparent D-type latches are built using advanced dual metal CMOS technology. These high-speed, low-power latches are ideal for temporary stor­ age of data. They can be used for implementing memory

Contextual Info: IDT7132SA/LA IDT7142SA/LA CMOS DUAL-PORT RAM 1 6 K 2 K x 8 -B IT Integrated D evice T echnology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/35/55/100ns (max.) — Com mercial: 25/35/55/100ns (max,) — Com mercial: 20ns only in PLCC for 7132

Contextual Info: IDT54/74FCT3245/A 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using m achine model C = 200pF, R = 0 • 25 mil Center SSOP Packages

Contextual Info: IDT79R3041 IDT79RV3041 IDT79R3041 INTEGRATED RISController FOR LOW-COST SYSTEMS Double-frequency clock input 16.67MHz, 20MHz, 25MHz and 33MHz operation 20MIPS at 25MHz Low cost 84-pin PLCC packaging On-chip 4-deep write buffer eliminates memory write stalls

s692

Abstract: S693 s684 S687 S694 S69-1 72125
Contextual Info: 14E D INTEGRATED DEVICE IntegratedDeviceTechnotogy Inc • MASS771 0D0373S 2 ■ 256x16,512x16, 1024 x 16 PARALLELTO-SERIAL CMOS FIFO DESCRIPTION: FEATURES: 25ns parallel port a c c e ss time 50MHz serial output port shift rate E a s ily expandable In depth and width